公开(公告)号：US20190131115A1

公开(公告)日：2019-05-02

申请号：US16174679

申请日：2018-10-30

Applicant: SEMES CO., LTD.

Inventor： Jamyung Gu ,  Jungmo Gu ,  Jun Ho Lee ,  Jong Hwan An ,  Saewon Na

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/3065 ,  H03H7/01

Abstract: The substrate treating apparatus includes a chamber having a treatment space in the interior thereof, a support unit configured to support a substrate, a gas supply unit configured to supply a gas into the treatment space, and a plasma source configured to generate plasma, wherein the support unit includes a support plate, on which the substrate is positioned, a ring assembly surrounding a circumference of the support plate and having a ring-shaped electrode, and a voltage applying unit configured to control an incident angle of the plasma onto the substrate by applying a voltage to the ring-shaped electrode, and wherein the voltage applying unit includes a base plate of a conductive material, a DC power source configured to apply a DC voltage to the base plate, and a plurality of connecting bodies connecting the base plate and the ring-shaped electrode, formed of a conductive material.