公开(公告)号：US11437220B2

公开(公告)日：2022-09-06

申请号：US16907208

申请日：2020-06-20

Applicant: SEMES CO., LTD.

Inventor： Ja Myung Gu ,  Shant Arakel Yan ,  Jung Mo Gu ,  Tae Hoon Jo

IPC: H01J37/32

Abstract: A plasma processing apparatus includes a processing chamber providing space for plasma generation, a chuck member provided in the processing chamber and supporting a substrate, at least two RF power sources providing RF power of different frequencies to the chuck member, a ring member provided to surround the chuck member, an edge electrode arranged in the ring member to be electrically insulated from the chuck member, and a variable impedance circuit being electrically connected to the edge electrode. The variable impedance circuit includes an adjustable impedance configured to control a potential of the edge electrode and a high-frequency stop circuit configured to block high-frequency power from being transmitted to the adjustable impedance.