公开(公告)号：US20240064967A1

公开(公告)日：2024-02-22

申请号：US18206490

申请日：2023-06-06

Applicant: SEMES CO., LTD.

Inventor： Chengyeh Hsu ,  Thomas Jongwan Kwon ,  Yunsang Kim ,  Haewon Choi

IPC: H10B12/00

CPC classification number: H10B12/482 ,  H10B12/488 ,  H10B12/315

Abstract: A semiconductor device includes bit lines each extending in a first direction on a substrate and spaced apart from each other in a second direction, semiconductor patterns disposed on each of the bit lines and including a first semiconductor pattern disposed on a first bit line, and a second semiconductor pattern arranged to be offset in the second direction from the first semiconductor pattern on the first bit line, word lines each extending in the second direction and surrounding a sidewall of each of the semiconductor patterns, the word lines including a first word line extending in the second direction and surrounding the first semiconductor pattern, and a second word line spaced apart in the first direction from the first word line and extending in the second direction while surrounding the second semiconductor pattern, and storage nodes respectively disposed on the semiconductor patterns.