公开(公告)号：US20250146129A1

公开(公告)日：2025-05-08

申请号：US18907446

申请日：2024-10-04

Applicant: SEMES CO., LTD.

Inventor： Yeong Gyu KIM ,  Guen Do PARK

IPC: C23C16/448 ,  C23C16/24 ,  C23C16/40 ,  C23C16/455 ,  C23C16/458 ,  C23C16/50 ,  C23C16/52

Abstract: Disclosed are a semiconductor manufacturing facility and a shower head coating method using the same. The semiconductor manufacturing facility includes an index block, a processing block including a substrate processing apparatus, and a substrate transferring block. The substrate processing apparatus includes a chamber including a processing space defined therein, a substrate support unit disposed in the processing space and including a first heating member configured to heat the substrate coated with the precursor, a gas supply unit configured to supply gas to the processing space, a plasma generation unit configured to convert the supplied gas into plasma, a shower head configured to supply the supplied gas to the processing space, and a controller. The controller controls the first heating member to heat the substrate supported by the substrate support unit so that the precursor applied to the substrate is vaporized and a coating layer is formed on the shower head.