公开(公告)号：US20160126236A1

公开(公告)日：2016-05-05

申请号：US14531380

申请日：2014-11-03

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： David M. HEMINGER ,  Thomas KEENA

IPC: H01L27/02 ,  H01L29/06 ,  H01L21/8222 ,  H01L27/06

CPC classification number: H01L27/0259 ,  H01L21/8222 ,  H01L27/0635 ,  H01L27/0647 ,  H01L29/0684 ,  H01L29/7408

Abstract: In one embodiment, a semiconductor device may include a first transistor having a first current carrying electrode, a second current carrying electrode, and a control electrode; a first bipolar transistor having a collector coupled to the first current carrying electrode of the first transistor, a base coupled to the second current carrying electrode of the first transistor, and an emitter of the first bipolar transistor coupled to a first node of the semiconductor device. In an embodiment, the first node is connected to a terminal of a semiconductor package. An embodiment may include a semiconductor component coupled between the base of the first bipolar transistor and the emitter of the second bipolar transistor.

Abstract translation: 在一个实施例中，半导体器件可以包括具有第一载流电极，第二载流电极和控制电极的第一晶体管; 第一双极晶体管，其具有耦合到第一晶体管的第一载流电极的集电极，耦合到第一晶体管的第二载流电极的基极和耦合到半导体器件的第一节点的第一双极晶体管的发射极 。 在一个实施例中，第一节点连接到半导体封装的端子。 实施例可以包括耦合在第一双极晶体管的基极和第二双极晶体管的发射极之间的半导体元件。