公开(公告)号：US20180138319A1

公开(公告)日：2018-05-17

申请号：US15349162

申请日：2016-11-11

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Ali SALIH ,  Gordon M. GRIVNA ,  Daniel R. HEUTTL ,  Osamu ISHIMARU ,  Thomas KEENA ,  Masafumi UEHARA

IPC: H01L29/861 ,  H01L29/06 ,  H01L29/41 ,  H01L29/45 ,  H01L29/40 ,  H01L29/66 ,  H01L27/08

CPC classification number: H01L29/861 ,  H01L27/0814 ,  H01L29/0623 ,  H01L29/0684 ,  H01L29/407 ,  H01L29/41 ,  H01L29/45 ,  H01L29/66136

Abstract: A semiconductor device structure includes a region of semiconductor material with a first major surface and an opposing second major surface. A contact structure is disposed in a first portion of the region of semiconductor material and includes a tub structure extending from adjacent a first portion of the first major surface. A plurality of structures comprising portions of the region of semiconductor material extend outward from a lower surface of the tub structure. In some embodiments, the plurality of structures comprises a plurality of free-standing structures. A conductive material is disposed within the tub structure and laterally surrounding the plurality of structures. In one embodiment, the contact structure facilitates the fabrication of a monolithic series switching diode structure having a low-resistance substrate contact.

公开(公告)号：US20160126236A1

公开(公告)日：2016-05-05

申请号：US14531380

申请日：2014-11-03

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： David M. HEMINGER ,  Thomas KEENA

IPC: H01L27/02 ,  H01L29/06 ,  H01L21/8222 ,  H01L27/06

CPC classification number: H01L27/0259 ,  H01L21/8222 ,  H01L27/0635 ,  H01L27/0647 ,  H01L29/0684 ,  H01L29/7408

Abstract: In one embodiment, a semiconductor device may include a first transistor having a first current carrying electrode, a second current carrying electrode, and a control electrode; a first bipolar transistor having a collector coupled to the first current carrying electrode of the first transistor, a base coupled to the second current carrying electrode of the first transistor, and an emitter of the first bipolar transistor coupled to a first node of the semiconductor device. In an embodiment, the first node is connected to a terminal of a semiconductor package. An embodiment may include a semiconductor component coupled between the base of the first bipolar transistor and the emitter of the second bipolar transistor.

Abstract translation: 在一个实施例中，半导体器件可以包括具有第一载流电极，第二载流电极和控制电极的第一晶体管; 第一双极晶体管，其具有耦合到第一晶体管的第一载流电极的集电极，耦合到第一晶体管的第二载流电极的基极和耦合到半导体器件的第一节点的第一双极晶体管的发射极 。 在一个实施例中，第一节点连接到半导体封装的端子。 实施例可以包括耦合在第一双极晶体管的基极和第二双极晶体管的发射极之间的半导体元件。