公开(公告)号：US20250169074A1

公开(公告)日：2025-05-22

申请号：US18515968

申请日：2023-11-21

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Gang LIU ,  Santosh MENON

IPC: H10B43/30 ,  H01L21/28 ,  H01L21/8249 ,  H01L27/06 ,  H01L29/66 ,  H10B69/00

Abstract: One illustrative integrated circuit manufacturing method includes: a sequence of process operations to provide bipolar devices, CMOS (complementary metal oxide semiconductor) devices, and DMOS (double-diffused metal oxide semiconductor) devices on a monolithic integrated circuit substrate; and further operations to provide nonvolatile memory cells on the monolithic integrated circuit substrate with no additional thermal budget, with no additional implant operations, and with only a single additional mask, relative to the sequence of process operations. The sequence of process operations includes one or more ion implantation operations to form wells and/or buried layers for the bipolar devices, the CMOS devices, and the DMOS devices, on a shared integrated circuit substrate; an annealing operation to heal damage from the one or more ion implantation operations before forming sources and drains for the CMOS and DMOS devices; and gate formation operations to form gates for the CMOS devices and the DMOS devices.