公开(公告)号：US20220199764A1

公开(公告)日：2022-06-23

申请号：US17247796

申请日：2020-12-23

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Jaume ROIG-GUITART ,  Fredrik ALLERSTAM ,  Thomas NEYER ,  Andrei KONSTANTINOV ,  Martin DOMEIJ ,  Jangkwon LIM

IPC: H01L29/06 ,  H01L29/16

Abstract: In a general aspect, a semiconductor device can include a substrate of a first conductivity type, an active region disposed in the substrate, and a termination region disposed in the substrate adjacent to the active region. The termination region can include a junction termination extension (JTE) of a second conductivity type, where the second conductivity type is opposite the first conductivity type. The JTE can have a first depletion stopper region disposed in an upper portion of the JTE, a second depletion stopper region disposed in a lower portion of the JTE, and a high carrier mobility region disposed between the first depletion stopper region and the second depletion stopper region.