公开(公告)号：US20220199764A1

公开(公告)日：2022-06-23

申请号：US17247796

申请日：2020-12-23

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Jaume ROIG-GUITART ,  Fredrik ALLERSTAM ,  Thomas NEYER ,  Andrei KONSTANTINOV ,  Martin DOMEIJ ,  Jangkwon LIM

IPC: H01L29/06 ,  H01L29/16

Abstract: In a general aspect, a semiconductor device can include a substrate of a first conductivity type, an active region disposed in the substrate, and a termination region disposed in the substrate adjacent to the active region. The termination region can include a junction termination extension (JTE) of a second conductivity type, where the second conductivity type is opposite the first conductivity type. The JTE can have a first depletion stopper region disposed in an upper portion of the JTE, a second depletion stopper region disposed in a lower portion of the JTE, and a high carrier mobility region disposed between the first depletion stopper region and the second depletion stopper region.

公开(公告)号：US20220285248A1

公开(公告)日：2022-09-08

申请号：US17194846

申请日：2021-03-08

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Thomas NEYER ,  Herbert DE VLEESCHOUWER ,  Fredrik ALLERSTAM

IPC: H01L23/482 ,  H01L29/16 ,  H01L29/10 ,  H01L29/739 ,  H01L29/78 ,  H01L21/768 ,  H01L29/66

Abstract: In a general aspect, a semiconductor device can include a plurality of vertical transistor segments disposed in an active region of a semiconductor region. The plurality of vertical transistor segments can include respective gate electrodes. A first dielectric can be disposed on the active region. An electrically conductive grid can be disposed on the first dielectric. The electrically conductive grid can be electrically coupled with the respective gate electrodes using a plurality of conductive contacts formed through the first dielectric. A second dielectric can be disposed on the electrically conductive grid and the first dielectric. A conductive metal layer can be disposed on the second dielectric layer. The conductive metal layer can include a portion that is electrically coupled with the respective gate electrodes through the electrically conductive grid using at least one conductive contact to the electrically conductive grid formed through the second dielectric.

公开(公告)号：US20240014328A1

公开(公告)日：2024-01-11

申请号：US17811618

申请日：2022-07-11

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Alexander Viktorovich BOLOTNIKOV ,  Fredrik ALLERSTAM

IPC: H01L29/872 ,  H01L29/16 ,  H01L29/06

CPC classification number: H01L29/872 ,  H01L29/1608 ,  H01L29/063

Abstract: In some aspects, the techniques described herein relate to a diode including: a substrate of a first conductivity type; a semiconductor layer of the first conductivity type disposed on the substrate, the semiconductor layer including a drift region; a shield region of a second conductivity type disposed in the semiconductor layer adjacent to the drift region; a surface region of the first conductivity type disposed in a first portion of the drift region adjacent to the shield region, the surface region having a doping concentration that is greater than a doping concentration of a second portion of the drift region adjacent to the surface region, the second portion of the drift region excluding the surface region; and a Schottky material disposed on: at least a portion of the shield region; the surface region in the first portion of the drift region; and the second portion of the drift region.

公开(公告)号：US20210118666A1

公开(公告)日：2021-04-22

申请号：US17136243

申请日：2020-12-29

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Michael J. SEDDON ,  Thomas NEYER ,  Fredrik ALLERSTAM

IPC: H01L21/02

Abstract: Implementations of methods of thinning a semiconductor substrate may include: providing a semiconductor substrate having a first surface and a second surface opposing the first surface, the semiconductor substrate having a thickness between the first surface and the second surface. The method may further include inducing damage into a portion of the semiconductor substrate at a first depth into the thickness forming a first damage layer, inducing damage into a portion of the semiconductor substrate at a second depth into the thickness forming a second damage layer, and applying ultrasonic energy to the semiconductor substrate. The method may include separating the semiconductor substrate into three separate thinned portions across the thickness along the first damage layer and along the second damage layer.