公开(公告)号：US10217737B2

公开(公告)日：2019-02-26

申请号：US15648264

申请日：2017-07-12

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Balaji Padmanabhan ,  Prasad Venkatraman ,  Zia Hossain ,  Chun-Li Liu ,  Woochul Jeon ,  Jason Mcdonald

IPC: H01L29/66 ,  H01L27/06 ,  H01L27/02 ,  H01L23/367 ,  H01L29/417 ,  H01L29/778 ,  H01L29/10 ,  H01L21/8258 ,  H01L21/74 ,  H01L29/872 ,  H01L23/48 ,  H01L29/861 ,  H01L29/20

Abstract: In one embodiment, a cascode rectifier structure includes a group III-V semiconductor structure includes a heterostructure disposed on a semiconductor substrate. A first current carrying electrode and a second current carrying electrode are disposed adjacent a major surface of the heterostructure and a control electrode is disposed between the first and second current carrying electrode. A rectifier device is integrated with the group III-V semiconductor structure and is electrically connected to the first current carrying electrode and to a third electrode. The control electrode is further electrically connected to the semiconductor substrate and the second current path is generally perpendicular to a primary current path between the first and second current carrying electrodes. The cascode rectifier structure is configured as a two terminal device.