公开(公告)号：US20160099314A1

公开(公告)日：2016-04-07

申请号：US14508266

申请日：2014-10-07

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Kirk HUANG ,  Chun-Li LIU ,  Ali SALIH

IPC: H01L29/06 ,  H01L29/66 ,  H01L21/28 ,  H01L29/78 ,  H01L29/423

CPC classification number: H01L29/0696 ,  H01L27/0629 ,  H01L27/0883 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/78

Abstract: In one embodiment, a method of forming an MOS transistor includes forming a threshold voltage (Vth) of the MOS transistor to have a first value at interior portions of the MOS transistor and a second value at other locations within the MOS transistor that are distal from the interior portion wherein the second value is less than the first value.

Abstract translation: 在一个实施例中，形成MOS晶体管的方法包括：形成MOS晶体管的阈值电压（Vth），以在MOS晶体管的内部具有第一值，并且在远离MOS晶体管的其他位置处形成第二值 所述内部部分，其中所述第二值小于所述第一值。