公开(公告)号：US11049956B2

公开(公告)日：2021-06-29

申请号：US16545826

申请日：2019-08-20

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Dean E. Probst ,  Jeffery A. Neuls ,  Masaichi Eda ,  Peter A. Burke ,  Peter McGrath ,  Prasad Venkatraman

IPC: H01L29/40 ,  H01L29/66 ,  H01L29/423

Abstract: In one embodiment, a method of forming a semiconductor device forms gate trenches in a semiconductor substrate. A portion of the material between the trenches is narrowed and another material is formed on sidewalls of the narrowed portion that is substantially not etched by an etchant that etches the material of the portion of the material between the trenches. Source and gate contact openings are formed together.