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    Transistor device having a source region segments and body region segments
    1.
    发明授权
    Transistor device having a source region segments and body region segments 有权

    公开(公告)号：US11605734B2

    公开(公告)日：2023-03-14

    申请号：US17452095

    申请日：2021-10-25

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Takashi Ogura ,  Takashi Hiroshima ,  Toshimitsu Taniguchi ,  Peter A. Burke

    IPC: H01L29/78 ,  H01L29/417

    Abstract: In one general aspect, an apparatus can include a first trench disposed in a semiconductor region and including a gate electrode and a second trench disposed in the semiconductor region. The apparatus can include a mesa region disposed between the first trench and the second trench. The apparatus can include a source region segment of a first conductivity type disposed in a first side of the mesa region where the source region segment is included in a plurality of source region segments and where the plurality of source region segments are aligned along the longitudinal axis. The apparatus can include a body region segment of a second conductivity type disposed in a second side of the mesa region opposite the first side of the mesa region and having a portion disposed above the source region segment where the body region segment is included in a plurality of body region segments.

    Transistor device having a source region segments and body region segments
    4.
    发明授权
    Transistor device having a source region segments and body region segments 有权

    公开(公告)号：US11996477B2

    公开(公告)日：2024-05-28

    申请号：US18182186

    申请日：2023-03-10

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Takashi Ogura ,  Takashi Hiroshima ,  Toshimitsu Taniguchi ,  Peter A. Burke

    IPC: H01L29/78 ,  H01L29/417

    CPC classification number: H01L29/7813 ,  H01L29/41741 ,  H01L29/7803 ,  H01L29/7809

    Abstract: In one general aspect, an apparatus can include a first trench disposed in a semiconductor region and including a gate electrode and a second trench disposed in the semiconductor region. The apparatus can include a mesa region disposed between the first trench and the second trench. The apparatus can include a source region segment of a first conductivity type disposed in a first side of the mesa region where the source region segment is included in a plurality of source region segments and where the plurality of source region segments are aligned along the longitudinal axis. The apparatus can include a body region segment of a second conductivity type disposed in a second side of the mesa region opposite the first side of the mesa region and having a portion disposed above the source region segment where the body region segment is included in a plurality of body region segments.

    Methods and structures for contacting shield conductor in a semiconductor device
    5.
    发明授权
    Methods and structures for contacting shield conductor in a semiconductor device 有权

    公开(公告)号：US11482616B2

    公开(公告)日：2022-10-25

    申请号：US17248008

    申请日：2021-01-05

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Peter A. Burke

    IPC: H01L29/78 ,  H01L29/66 ,  H01L29/423

    Abstract: A semiconductor device includes a region of semiconductor material comprising a major surface and a first conductivity type and a shielded-gate trench structure. The shielded-gate trench structure includes an active trench, an insulated shield electrode in the lower portion of the active trench; an insulated gate electrode adjacent to the gate dielectric in an upper portion of the active trench; and an inter-pad dielectric (IPD) interposed between the gate electrode and the shield electrode. An interlayer dielectric (ILD) structure is over the major surface. A conductive region is within the active trench and extends through the ILD structure, the gate electrode, and the IPD, and is electrically connected to the shield electrode. The conductive region is electrically isolated from the gate electrode by a dielectric spacer. The gate electrode comprises a shape that surrounds the conductive region in a top view so that the gate electrode is uninterrupted by the conductive region and the dielectric spacer.

    Transistor device having a pillar structure
    7.
    发明授权
    Transistor device having a pillar structure 有权

    公开(公告)号：US10340372B1

    公开(公告)日：2019-07-02

    申请号：US15943914

    申请日：2018-04-03

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Takashi Ogura ,  Mitsuru Soma ,  Dean E. Probst ,  Takashi Hiroshima ,  Peter A. Burke ,  Toshimitsu Taniguchi

    IPC: H01L29/739 ,  H01L29/423 ,  H01L29/10 ,  H01L29/78 ,  H01L29/732

    Abstract: In at least one general aspect, an apparatus can include a first trench disposed in a semiconductor region and including a gate electrode, and a second trench disposed in the semiconductor region. The apparatus can include a mesa region disposed between the first trench and the second trench, and a source region of a first conductivity type disposed in a top portion of the mesa region. The apparatus can include an epitaxial layer of the first conductivity type, and a body region of a second conductivity type disposed in the mesa region and disposed between the source region and the epitaxial layer of the first conductivity type. The apparatus can include a pillar of the second conductivity type disposed in the mesa region such that a first portion of the source region is disposed lateral to the pillar and a second portion of the source region is disposed above the pillar.

    Semiconductor devices with low resistance gate and shield electrodes and methods
    10.
    发明授权
    Semiconductor devices with low resistance gate and shield electrodes and methods 有权

    公开(公告)号：US11437507B2

    公开(公告)日：2022-09-06

    申请号：US17060280

    申请日：2020-10-01

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Peter A. Burke ,  Mitsuru Soma

    IPC: H01L29/78 ,  H01L29/10 ,  H01L29/66 ,  H01L29/40 ,  H01L21/765

    Abstract: A semiconductor device includes a region of semiconductor material and a trench gate structure. The trench gate structure includes an active trench, a shield dielectric layer in a lower portion of the active trench, and a shield electrode of a first polycrystalline semiconductor material adjacent to the shield dielectric layer. A gate dielectric layer is adjacent to an upper portion of the active trench and a gate electrode of a second polycrystalline semiconductor material is adjacent to the gate dielectric layer. A shield conductive layer of a first conductive material is adjacent to the shield electrode and a gate conductive layer of the first conductive material is adjacent to the gate electrode. A dielectric fill structure is in the active trench electrically isolating the gate electrode and the gate conductive layer from the shield electrode and the shield conductive layer. In some examples, the semiconductor device includes a trench shield contact structure that includes the shield conductive layer.

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