公开(公告)号：US20190043903A1

公开(公告)日：2019-02-07

申请号：US16116634

申请日：2018-08-29

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Jeffrey Peter GAMBINO ,  Angel RODRIGUEZ ,  David T. PRICE ,  Jeffery Allen NEULS ,  Kenneth Andrew BATES ,  Rick MAURITZSON

IPC: H01L27/146 ,  H01L27/06

CPC classification number: H01L27/14609 ,  H01L27/0617 ,  H01L27/1463 ,  H01L27/14634 ,  H01L27/14636

Abstract: Implementations of image sensors may include a first die including an image sensor array and a first plurality of interconnects where the image sensor array includes a plurality of photodiodes and a plurality of transfer gates. The image sensor array may also include a second die including a second plurality of interconnects and a plurality of capacitors, each capacitor selected from the group consisting of deep trench capacitors, metal-insulator-metal (MIM) capacitors, polysilicon-insulator-polysilicon (PIP) capacitors, and 3D stacked capacitors. The first die may be coupled to the second die through the first plurality of interconnects and through the second plurality of interconnects. No more than eight photodiodes of the plurality of photodiodes of the first die may be electrically coupled with no more than four capacitors of the plurality of capacitors.