公开(公告)号：US20230352515A1

公开(公告)日：2023-11-02

申请号：US18347117

申请日：2023-07-05

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Jeffrey Peter GAMBINO ,  Rick JEROME ,  David T. PRICE

IPC: H01L27/146 ,  H01L23/532

CPC classification number: H01L27/14636 ,  H01L27/1464 ,  H01L23/53266 ,  H01L27/1462 ,  H01L27/1463

Abstract: Implementations of image sensor devices may include a through-silicon-via (TSV) formed in a backside of an image sensor device and extending through a material of a die to a metal landing pad. The metal landing pad may be within a contact layer. The devices may include a TSV edge seal ring surrounding a portion of the TSV in the contact layer and extending from a first surface of the contact layer into the contact layer to a depth coextensive with a depth of the TSV.

公开(公告)号：US20200328271A1

公开(公告)日：2020-10-15

申请号：US16506040

申请日：2019-07-09

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Jeffrey Peter GAMBINO ,  David T. PRICE ,  Akihiro HASEGAWA ,  Derryl ALLMAN ,  Sallie J. HOSE ,  Kenneth Andrew BATES ,  Gregory Frank PIATT

IPC: H01L49/02 ,  H01L23/522 ,  H01L27/146 ,  H01L21/3213 ,  H01L21/321

Abstract: Implementations of capacitors may include: a first electrode having a first side and a second side. The capacitor may also include a silicon nitride (SiN) layer including on the second side of the first electrode. An opening may be included in the silicon nitride layer. The capacitors may include a dielectric layer within the opening of the SiN layer. The dielectric layer may include a recess. The capacitor may also include a second electrode having a first side and a second side. The first side of the second electrode may be included within the recess of the dielectric layer.

公开(公告)号：US20240194710A1

公开(公告)日：2024-06-13

申请号：US18586731

申请日：2024-02-26

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Jeffrey Peter GAMBINO ,  Kyle THOMAS ,  David T. PRICE ,  Rusty WINZENREAD ,  Bruce GREENWOOD

IPC: H01L27/146

CPC classification number: H01L27/14618 ,  H01L27/14634 ,  H01L27/14636

Abstract: Implementations of semiconductor packages may include: a digital signal processor having a first side and a second side and an image sensor array, having a first side and a second side. The first side of the image sensor array may be coupled to the second side of the digital signal processor through a plurality of hybrid bond interconnect (HBI) bond pads and an edge seal. One or more openings may extend from the second side of the image sensor array into the second side of the digital signal processor to an etch stop layer in the second side of the digital signal processor. The one or more openings may form a second edge seal between the plurality of HBI bond pads and the edge of the digital signal processor.

公开(公告)号：US20220093667A1

公开(公告)日：2022-03-24

申请号：US17029682

申请日：2020-09-23

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Manuel H. INNOCENT ,  Tomas GEURTS ,  David T. PRICE

IPC: H01L27/146

Abstract: Implementations of a semiconductor device may include a photodiode included in a second epitaxial layer of a semiconductor substrate; light shield coupled over the photodiode; and a first epitaxial layer located in one or more openings in the light shield. The first epitaxial layer and the second epitaxial layer may form a single crystal.

公开(公告)号：US20200273896A1

公开(公告)日：2020-08-27

申请号：US16506087

申请日：2019-07-09

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Manuel H. INNOCENT ,  Kevin Alexander STEWART ,  David T. PRICE

IPC: H01L27/146

Abstract: Implementations of pixels may include a photodiode layer including a photodetector and two or more silicon based circular transistors and an interconnect layer coupled to the photodiode layer. The interconnect layer may include an amorphous oxide semiconductor (AOS) transistor operatively coupled with the two or more silicon based circular transistors.

公开(公告)号：US20240145504A1

公开(公告)日：2024-05-02

申请号：US18051600

申请日：2022-11-01

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Jeffrey Peter GAMBINO ,  Rick Carlton JEROME ,  David T. PRICE ,  Michael Gerard KEYES ,  Anne DEIGNAN

IPC: H01L27/146

CPC classification number: H01L27/14618 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643

Abstract: A semiconductor device may include a plurality of single-photon avalanche diode (SPAD) pixels. The semiconductor device may be a backside device having a substrate at the backside, dielectric layers on the substrate, metal layers interleaved with the dielectric layers, and a through silicon via (TSV) formed in the backside through the substrate and the dielectric layers. TSV seal rings may be formed around the TSV to protect the semiconductor device from moisture and/or water ingress. The TSV seal rings may be coupled to a high-voltage cathode bond pad and be coupled to offset portions of one of the metal layers to reduce leakage and/or parasitic effects due to the voltage difference between the cathode and the substrate. The TSV seal rings may also be merged with die seal rings at the edge of the substrate.

公开(公告)号：US20220271118A1

公开(公告)日：2022-08-25

申请号：US17249279

申请日：2021-02-25

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Rick Carlton JEROME ,  Gordon M. GRIVNA ,  Kevin Alexander STEWART ,  David T. PRICE ,  Jeffrey Peter GAMBINO

IPC: H01L49/02 ,  H01C7/00

Abstract: An integrated circuit die includes a silicon chromium (SiCr) thin film resistor disposed on a first oxide layer. The SiCr thin film resistor has a resistor body and a resistor head. A second oxide layer overlays the SiCr thin film resistor. The second oxide layer has an opening exposing a surface of the resistor head. A metal pad is disposed in the opening in the second oxide layer and is contact with the surface of the resistor head exposed by the opening. Further, an interlevel dielectric layer is disposed on the second oxide layer overlaying the SiCr thin film resistor. A metal-filled via extends from a top surface of interlevel dielectric layer through the interlevel dielectric layer and contacts the metal pad disposed in the opening in the second oxide layer.

公开(公告)号：US20220181462A1

公开(公告)日：2022-06-09

申请号：US17247212

申请日：2020-12-03

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Jeffrey Peter GAMBINO ,  Kevin Alexander STEWART ,  Peter MOENS ,  David T. PRICE ,  Derryl ALLMAN

IPC: H01L29/49 ,  H01L29/24 ,  H01L29/08 ,  H01L29/417 ,  H01L29/78 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L29/66

Abstract: In a general aspect, a transistor can include a fin having a proximal end and a distal end. The fin can include a dielectric portion longitudinally extending between the proximal end and the distal end, and a semiconductor layer disposed on the dielectric portion. The semiconductor layer can longitudinally extend between the proximal end and the distal end. The transistor can further include a source region disposed at the proximal end of the fin, and a drain region disposed at the distal end of the fin. The transistor can also include a gate dielectric layer disposed on a channel region of the semiconductor layer. The channel region can be disposed between the gate dielectric layer and the dielectric portion. The channel region can be longitudinally disposed between the source region and the drain region. The transistor can further include a conductive gate electrode disposed on the gate dielectric layer.

公开(公告)号：US20170092669A1

公开(公告)日：2017-03-30

申请号：US15375764

申请日：2016-12-12

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Rick JEROME ,  David T. PRICE ,  Sungkwon C. HONG ,  Gordon M. Grivna

IPC: H01L27/146 ,  H01L23/48

CPC classification number: H01L27/1464 ,  H01L21/76898 ,  H01L23/481 ,  H01L27/14605 ,  H01L27/1462 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14683 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689

Abstract: An image sensor structure includes a region of semiconductor material having a first major surface and a second major surface. A pixel structure is within the region of semiconductor material and includes a plurality of doped regions and a plurality of conductive structures. A metal-filled trench structure extends from the first major surface to the second major surface. A first contact structure is electrically connected to a first surface of the conductive trench structure, and a second contact structure electrically connected to a second surface of the conductive trench structure. In one embodiment, the second major surface is configured to receive incident light.

公开(公告)号：US20250151431A1

公开(公告)日：2025-05-08

申请号：US19013861

申请日：2025-01-08

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Jeffrey Peter GAMBINO ,  Kyle THOMAS ,  David T. PRICE ,  Rusty WINZENREAD ,  Bruce Blair GREENWOOD

IPC: H10F39/00

Abstract: Implementations of semiconductor packages may include: a digital signal processor having a first side and a second side and an image sensor array, having a first side and a second side. The first side of the image sensor array may be coupled to the second side of the digital signal processor through a plurality of hybrid bond interconnect (HBI) bond pads and an edge seal. One or more openings may extend from the second side of the image sensor array into the second side of the digital signal processor to an etch stop layer in the second side of the digital signal processor. The one or more openings may form a second edge seal between the plurality of HBI bond pads and the edge of the digital signal processor.