公开(公告)号：US20170062411A1

公开(公告)日：2017-03-02

申请号：US14843852

申请日：2015-09-02

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Jaume ROIG GUITART ,  Samir MOUHOUBI ,  Filip BAUWENS

IPC: H01L27/06 ,  H01L29/78 ,  H01L29/66 ,  H01L29/06

CPC classification number: H01L27/0629 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/665 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/7806 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/8725

Abstract: A semiconductor device includes a semiconductor substrate defining a major surface. The device further includes a first region including at least a first pillar of a first conductivity type extending in a vertical orientation with respect to the major surface. The device further includes a second region of the first conductivity type. The first pillar includes a higher doping concentration than the second region. The device further includes a Schottky contact coupled to the second region.

Abstract translation: 半导体器件包括限定主表面的半导体衬底。 该装置还包括第一区域，该第一区域至少包括相对于该主表面在垂直取向上延伸的第一导电类型的第一支柱。 该装置还包括第一导电类型的第二区域。 第一支柱包括比第二区域更高的掺杂浓度。 该器件还包括耦合到第二区域的肖特基接触。