公开(公告)号：US20160036431A1

公开(公告)日：2016-02-04

申请号：US14576604

申请日：2014-12-19

Applicant: Semiconductor Components Industries, LLC

Inventor： Jaume ROIG-GUITART ,  Filip BAUWENS ,  Chin Foong TONG

IPC: H03K17/10 ,  H02M3/158

CPC classification number: H03K17/102 ,  H02M1/32 ,  H02M3/158

Abstract: An electronic device can include a switch coupled to a switching node. In an embodiment, the switch has a breakdown voltage is less than 2.0 times the designed operating voltage. In another embodiment, the electronic device can further include another switch, wherein both switches are coupled to each other at a switching node. The switches can have different breakdown voltages. In a particular embodiment, either or both switches can include a field-effect transistor and a zener diode that are connected in parallel. The zener diode can be designed to breakdown at a relatively lower fraction of the designed operating voltage as compared to a conventional device. Embodiments can be used to reduce voltage overshoot and ringing at the switching node that may occur after changing the states of the first and second switches. Processes of forming the electronic device can be implemented without significant complexity.

Abstract translation: 电子设备可以包括耦合到交换节点的开关。 在一个实施例中，开关的击穿电压小于设计工作电压的2.0倍。 在另一个实施例中，电子设备还可以包括另一个交换机，其中两个交换机在交换节点处彼此耦合。 开关可以具有不同的击穿电压。 在特定实施例中，任一个或两个开关可以包括并联连接的场效应晶体管和齐纳二极管。 与常规器件相比，齐纳二极管可以设计成以设计的工作电压的相对较低的比例击穿。 实施例可以用于在改变第一和第二开关的状态之后可能发生的交换节点处的电压过冲和振铃。 可以在没有显着复杂性的情况下实现形成电子设备的过程。

公开(公告)号：US20180212021A1

公开(公告)日：2018-07-26

申请号：US15416726

申请日：2017-01-26

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Jaume ROIG-GUITART ,  Filip BAUWENS

IPC: H01L29/06

CPC classification number: H01L29/0634 ,  H01L29/0649 ,  H01L29/1058 ,  H01L29/1066 ,  H01L29/407 ,  H01L29/8083

Abstract: In at least some embodiments, a semiconductor device structure comprises a first surface comprising a source and a gate; a second surface comprising a drain; a substrate of a first type, wherein the substrate is in contact with the drain; a first column in contact with the substrate and the first surface of the device, the first column comprising a dielectric material; and a mirroring axis, wherein a centerline of the first column is disposed along the mirroring axis, forming a first device side and a second device side, wherein the first device side mirrors the second device side. The first device side comprises a column of a second type in contact with the first column, the substrate, and the first surface of the device; a second column of the first type in contact with the substrate and the second column; a third column of the first type in contact with the substrate and the second column; a first region of the first type disposed in contact with the third column; a second region of the first type disposed in contact with the source and with a third region of the first type; and a first trench comprising the second type and a first region of the second type, wherein the first region of the second type is in contact with a gate region.

公开(公告)号：US20170179825A1

公开(公告)日：2017-06-22

申请号：US15139921

申请日：2016-04-27

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Jaume ROIG-GUITART ,  Filip BAUWENS

IPC: H02M3/158 ,  H02M1/08

CPC classification number: H02M1/08 ,  H02M3/158 ,  H03K17/102 ,  H03K17/6871 ,  H03K17/74 ,  H03K2017/6875 ,  H03K2217/0018

Abstract: A method and apparatus for switched mode power supply (SMPS) system includes circuitry configured to produce a voltage output based on an input voltage, the SMPS circuitry includes inductive, capacitive and switching elements configured to generate the voltage output. The switching elements include at least one set of cascode coupled devices, each set of cascode coupled devices including a high electron mobility transistor (HEMT) and one of a diode and a field effect transistor (FET) in a cascode coupling. A controller produces a signal to a gate terminal of the FET of the sets of cascode coupled devices to drive the HEMT switching rate to adjust the output voltage. The circuitry of the SMPS further includes circuitry to couple the substrate of at least one HEMT to a high voltage node of the SMPS system to reduce large voltage spikes or dv/dts.

公开(公告)号：US20170062411A1

公开(公告)日：2017-03-02

申请号：US14843852

申请日：2015-09-02

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Jaume ROIG GUITART ,  Samir MOUHOUBI ,  Filip BAUWENS

IPC: H01L27/06 ,  H01L29/78 ,  H01L29/66 ,  H01L29/06

CPC classification number: H01L27/0629 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/665 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/7806 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/8725

Abstract: A semiconductor device includes a semiconductor substrate defining a major surface. The device further includes a first region including at least a first pillar of a first conductivity type extending in a vertical orientation with respect to the major surface. The device further includes a second region of the first conductivity type. The first pillar includes a higher doping concentration than the second region. The device further includes a Schottky contact coupled to the second region.

Abstract translation: 半导体器件包括限定主表面的半导体衬底。 该装置还包括第一区域，该第一区域至少包括相对于该主表面在垂直取向上延伸的第一导电类型的第一支柱。 该装置还包括第一导电类型的第二区域。 第一支柱包括比第二区域更高的掺杂浓度。 该器件还包括耦合到第二区域的肖特基接触。