公开(公告)号：US20190252255A1

公开(公告)日：2019-08-15

申请号：US16395822

申请日：2019-04-26

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Shutesh KRISHNAN ,  Sw Wei WANG ,  CH CHEW ,  How Kiat LIEW ,  Fui Fui TAN

IPC: H01L21/78 ,  H01L21/306 ,  H01L23/482

Abstract: Implementations of a method of forming a semiconductor package may include forming a plurality of notches into a first side of a wafer, the first side of the wafer including a plurality of electrical contacts. The method may also include coating the first side of the wafer and an interior of the plurality of notches with a molding compound, grinding a second side of the wafer to thin the wafer to a desired thickness, forming a back metal on a second side of the wafer, exposing the plurality of electrical contacts through grinding a first side of the molding compound, and singulating the wafer at the plurality of notches to form a plurality of semiconductor packages.