公开(公告)号：US20190115436A1

公开(公告)日：2019-04-18

申请号：US16134598

申请日：2018-09-18

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Zia HOSSAIN ,  Tetsuro ASANO ,  Syoji MIYAHARA ,  Yasuyuki SAYAMA

IPC: H01L29/40 ,  H01L29/78 ,  H01L29/423 ,  H01L29/36 ,  H01L29/06 ,  H01L29/10 ,  H01L29/812 ,  H01L29/08 ,  H01L29/66 ,  H01L29/739

Abstract: A semiconductor device structure includes a region of semiconductor material comprising a first conductivity type, an active region, and a termination region. A first active trench structure is disposed in the active region, and a second active trench structure is disposed in the active region and laterally separated from the first active trench by an active mesa region having a first width. A first termination trench structure is disposed in the termination region and separated from the second active trench by a transition mesa region having a second width and a higher carrier charge than that of the active mesa region. In one example, the second width is greater than the first width to provide the higher carrier charge. In another example, the dopant concentration in the transition mesa region is higher than that in the active mesa region to provide the higher carrier charge. The semiconductor device structure exhibits improved device ruggedness including, for example, improve unclamped inductive switching (UIS) performance.