公开(公告)号：US20240038800A1

公开(公告)日：2024-02-01

申请号：US18172730

申请日：2023-02-22

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Marc Allen SULFRIDGE ,  William CROFOOT ,  Swarnal BORTHAKUR

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14627 ,  H01L27/14685 ,  H01L27/14645

Abstract: An image sensor may include a sensor chip that is bonded to an application-specific integrated circuit (ASIC) chip. A bond pad for the image sensor may be formed in the ASIC chip and exposed through a trench in the sensor chip. The image sensor may include a conductive light shield at a periphery of the image sensor to shield optically black pixels. An opaque layer may be formed over the conductive light shield to mitigate reflections off the conductive light shield. An anti-reflective layer may be formed over the pixel array. The anti-reflective layer may have a different thickness over the pixel array than in the trench for the bond pad.