公开(公告)号：US20190189663A1

公开(公告)日：2019-06-20

申请号：US16282547

申请日：2019-02-22

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Larry Duane KINSMAN ,  Swarnal BORTHAKUR ,  Marc Allen SULFRIDGE ,  Scott Donald CHURCHWELL ,  Brian VAARTSTRA

IPC: H01L27/146

CPC classification number: H01L27/14621 ,  H01L27/14618 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14685 ,  H01L27/14687

Abstract: An image sensor package may include a semiconductor wafer having a pixel array, a color filter array (CFA) formed over the pixel array, and one or more lenses formed over the CFA. A light block layer may couple over the semiconductor wafer around a perimeter of the lenses and an encapsulation layer may be coupled around the perimeter of the lenses and over the light block layer. The light block layer may form an opening providing access to the lenses. A mold compound layer may be coupled over the encapsulation layer and the light block layer. A temporary protection layer may be used to protect the one or more lenses from contamination during application of the mold compound and/or during processes occurring outside of a cleanroom environment.

公开(公告)号：US20190189662A1

公开(公告)日：2019-06-20

申请号：US16282495

申请日：2019-02-22

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Larry Duane KINSMAN ,  Swarnal BORTHAKUR ,  Marc Allen SULFRIDGE ,  Scott Donald CHURCHWELL ,  Brian VAARTSTRA

IPC: H01L27/146

CPC classification number: H01L27/14621 ,  H01L27/14618 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14685 ,  H01L27/14687

Abstract: An image sensor package may include a semiconductor wafer having a pixel array, a color filter array (CFA) formed over the pixel array, and one or more lenses formed over the CFA. A light block layer may couple over the semiconductor wafer around a perimeter of the lenses and an encapsulation layer may be coupled around the perimeter of the lenses and over the light block layer. The light block layer may form an opening providing access to the lenses. A mold compound layer may be coupled over the encapsulation layer and the light block layer. A temporary protection layer may be used to protect the one or more lenses from contamination during application of the mold compound and/or during processes occurring outside of a cleanroom environment.

公开(公告)号：US20180331150A1

公开(公告)日：2018-11-15

申请号：US16038422

申请日：2018-07-18

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Ulrich BOETTIGER ,  Marc Allen SULFRIDGE ,  Andrew Eugene PERKINS

IPC: H01L27/146 ,  H01L27/148

CPC classification number: H01L27/14687 ,  H01L27/14607 ,  H01L27/14632 ,  H01L27/14806

Abstract: A semiconductor wafer has a plurality of non-rectangular semiconductor die with an image sensor region. The non-rectangular semiconductor die has a circular, elliptical, and shape with non-linear side edges form factor. The semiconductor wafer is singulated with plasma etching to separate the non-rectangular semiconductor die. A curved surface is formed in the image sensor region of the non-rectangular semiconductor die. The non-rectangular form factor effectively removes a portion of the base substrate material in a peripheral region of the semiconductor die to reduce stress concentration areas and neutralize buckling in the curved surface of the image sensor region. A plurality of openings or perforations can be formed in a peripheral region of a rectangular or non-rectangular semiconductor die to reduce stress concentration areas and neutralize buckling. A second semiconductor die can be formed in an area of the semiconductor wafer between the non-rectangular semiconductor die.

公开(公告)号：US20240145515A1

公开(公告)日：2024-05-02

申请号：US18558593

申请日：2022-04-27

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Swarnal BORTHAKUR ,  Mario M. PELELLA ,  Chandrasekharan KOTHANDARAMAN ,  Marc Allen SULFRIDGE ,  Yusheng LIN ,  Larry Duane KINSMAN

IPC: H01L27/146 ,  H01L23/00

CPC classification number: H01L27/14634 ,  H01L24/05 ,  H01L24/06 ,  H01L24/08 ,  H01L24/19 ,  H01L24/20 ,  H01L24/94 ,  H01L24/96 ,  H01L27/14636 ,  H01L24/13 ,  H01L24/32 ,  H01L24/80 ,  H01L2224/05647 ,  H01L2224/06181 ,  H01L2224/08145 ,  H01L2224/08225 ,  H01L2224/13025 ,  H01L2224/19 ,  H01L2224/211 ,  H01L2224/32225 ,  H01L2224/80357 ,  H01L2224/80379 ,  H01L2224/80896 ,  H01L2224/94 ,  H01L2224/96 ,  H01L2924/05442

Abstract: An integrated circuit package (34, 34′, 34″) may be implemented by stacked first, second, and third integrated circuit dies (40, 50, 60). The first and second dies (40, 50) may be bonded to each other using corresponding inter-die connection structures (74-1, 84-1) at respective interfacial surfaces facing the other die. The second die (50) may also include a metal layer (84-2) for connecting to the third die (60) at its interfacial surface with the first die (40). The metal layer (84-2) may be connected to a corresponding inter-die connection structure (64) on the side of the third die (60) facing the second die (50) through a conductive through-substrate via (84-2) and an additional metal layer (102) in a redistribution layer (96) between the second and third dies (50, 60). The third die (60) may have a different lateral outline than the second die (50).

公开(公告)号：US20230215960A1

公开(公告)日：2023-07-06

申请号：US18174017

申请日：2023-02-24

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Swarnal BORTHAKUR ,  Marc Allen SULFRIDGE

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14645 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14636

Abstract: An imaging device may include single-photon avalanche diodes (SPADs). To improve the sensitivity and signal-to-noise ratio of the SPADs, light scattering structures may be formed in the semiconductor substrate to increase the path length of incident light through the semiconductor substrate. To mitigate crosstalk, an isolation structure may be formed in a ring around the SPAD. The isolation structure may be a hybrid isolation structure with both a metal filler that absorbs light and a low-index filler that reflects light. The isolation structure may be formed as a single trench or may include a backside deep trench isolation portion and a front side deep trench isolation portion. The isolation structure may also include a color filtering material.

公开(公告)号：US20220367534A1

公开(公告)日：2022-11-17

申请号：US17302836

申请日：2021-05-13

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Jeffrey Peter GAMBINO ,  David T. PRICE ,  Marc Allen SULFRIDGE ,  Richard MAURITZSON ,  Michael Gerard KEYES ,  Ryan RETTMANN ,  Kevin MCSTAY

IPC: H01L27/146

Abstract: An imaging device may include single-photon avalanche diodes (SPADs). To mitigate crosstalk, isolation structures may be formed around each SPAD. The isolation structures may include front side deep trench isolation structures that extend partially or fully through a semiconductor substrate for the SPADs. The isolation structures may include a metal filler such as tungsten that absorbs photons. The isolation structures may include a p-type doped semiconductor liner to mitigate dark current. The isolation structures may include a buffer layer such as silicon dioxide that is interposed between the metal filler and the p-type doped semiconductor liner. The isolation structures may have a tapered portion or may be formed in two steps such that the isolation structures have different portions with different properties. An additional filler such as polysilicon or borophosphosilicate glass may be included in some of the isolation structures in addition to the metal filler.

公开(公告)号：US20190252333A1

公开(公告)日：2019-08-15

申请号：US15895668

申请日：2018-02-13

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Swarnal BORTHAKUR ,  Marc Allen SULFRIDGE

IPC: H01L23/00 ,  H01L27/146 ,  H01L23/48 ,  H01L21/768

CPC classification number: H01L24/05 ,  H01L21/76898 ,  H01L23/481 ,  H01L27/14636 ,  H01L27/1464 ,  H01L2224/05557 ,  H01L2224/05562 ,  H01L2224/05567 ,  H01L2224/0557 ,  H01L2224/05571

Abstract: Implementations of image sensors may include a silicon layer having a first side and a second side opposite the first side, an opening extending into the silicon layer from the first side of the silicon layer toward the second side, a via extending into the silicon layer from the second side of the silicon layer, and a conductive pad within the opening. The conductive pad may be coupled to the via. The opening may include a fill material. At least a portion of the fill material may form a plane that is substantially parallel with the first side of the silicon layer. The conductive pad may be exposed through an opening in the fill material.

公开(公告)号：US20240186350A1

公开(公告)日：2024-06-06

申请号：US18441588

申请日：2024-02-14

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Marc Allen SULFRIDGE ,  Byounghee LEE ,  Ulrich BOETTIGER

IPC: H01L27/146 ,  H01L31/107 ,  H04N25/50 ,  H04N25/702 ,  H04N25/75

CPC classification number: H01L27/14627 ,  H01L27/14685 ,  H01L31/107 ,  H04N25/50 ,  H04N25/702 ,  H04N25/75

Abstract: An imaging device may include a plurality of single-photon avalanche diode (SPAD) pixels. The SPAD pixels may be overlapped by square toroidal microlenses to direct light incident on the pixels onto photosensitive regions of the pixels. The square toroidal microlenses may be formed as first and second sets of microlenses aligned with every other SPAD pixel and may allow the square toroidal microlenses to be formed without gaps between adjacent lenses. Additionally or alternatively, a central portion of each square toroidal microlenses may be filled by a fill-in microlens. Together, the square toroidal microlenses and the fill-in microlenses may form convex microlenses over each SPAD pixel. The fill-in microlenses may be formed from material having a higher index of refraction than material that forms the square toroidal microlenses.

公开(公告)号：US20230197750A1

公开(公告)日：2023-06-22

申请号：US17644909

申请日：2021-12-17

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Marc Allen SULFRIDGE ,  Andrew Eugene PERKINS

IPC: H01L27/146 ,  G02B3/06 ,  G02B3/00 ,  H01L31/0216

CPC classification number: H01L27/14627 ,  G02B3/06 ,  G02B3/0043 ,  H01L31/02161 ,  G02B2003/0093 ,  H01L31/107

Abstract: An imaging device may include single-photon avalanche diodes (SPADs). Each SPAD may be overlapped by multiple microlenses. The microlenses over each SPAD may include first microlenses having a first size over a central portion of the SPAD and second microlenses having a second size that is greater than the first size over a peripheral area of the SPAD. The second microlenses may be spherical microlenses or cylindrical microlenses. The first microlenses may be aligned with underlying light scattering structures to improve the efficiency of the light scattering structures. The second microlenses may partially overlap isolation structures to direct light away from the isolation structures and towards the SPAD.

公开(公告)号：US20230154959A1

公开(公告)日：2023-05-18

申请号：US18149862

申请日：2023-01-04

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Marc Allen SULFRIDGE ,  Swarnal BORTHAKUR ,  Nathan Wayne CHAPMAN

IPC: H01L27/146 ,  H01L31/107

CPC classification number: H01L27/14627 ,  H01L27/14689 ,  H01L27/14643 ,  H01L31/107

Abstract: An imaging device may include a plurality of single-photon avalanche diode (SPAD) pixels. The SPAD pixels may be overlapped by microlenses to direct light incident on the pixels onto photosensitive regions of the pixels and a containment grid with openings that surround each of the microlenses. During formation of the microlenses, the containment grid may prevent microlens material for adjacent SPAD pixels from merging. To ensure separation between the microlenses, the containment grid may be formed from material phobic to microlens material, or phobic material may be added over the containment grid material. Additionally, the containment grid may be formed from material that can absorb stray or off-angle light so that it does not reach the associated SPAD pixel, thereby reducing crosstalk during operation of the SPAD pixels.