公开(公告)号：US20240371898A1

公开(公告)日：2024-11-07

申请号：US18309906

申请日：2023-05-01

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Bartosz Piotr BANACHOWICZ ,  Swarnal BORTHAKUR

IPC: H01L27/146 ,  H04N25/532

Abstract: Image sensor pixels, imaging systems, and methods for constructing image sensor pixels. The image sensor pixel includes a photosensitive region, a charge storage node, a deep trench isolation, and a spectral router. The charge storage node is positioned on a back-side of the photosensitive region. The deep trench isolation extends from a front-side of the photosensitive region toward the charge storage node. The spectral router is positioned on the front-side of the photosensitive region. The spectral router is configured to route photons of a first wavelength received at the spectral router into the photosensitive region and away from the charge storage node. The spectral router is also configured to route photons of a second wavelength received at the spectral router to one or more neighboring image sensor pixels.

公开(公告)号：US20230230989A1

公开(公告)日：2023-07-20

申请号：US17647999

申请日：2022-01-14

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Swarnal BORTHAKUR ,  Andrew Eugene PERKINS

IPC: H01L27/146 ,  H01L31/18

CPC classification number: H01L27/14627 ,  H01L31/18 ,  H01L27/14621

Abstract: Image pixels having IR sensors with reduced exposure to visible light. One example is an image sensor comprising: a photosensitive region; a lower optical filter above the photosensitive region, and the lower optical filter configured to filter visible light and to pass infrared light; and an upper optical filter above the lower optical filter, and the upper optical filter configured to filter visible light and to pass infrared light.

公开(公告)号：US20200066783A1

公开(公告)日：2020-02-27

申请号：US16672639

申请日：2019-11-04

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Swarnal BORTHAKUR

IPC: H01L27/146 ,  H01L21/66 ,  H01L23/00 ,  H01L23/31

Abstract: Methods of forming an image sensor chip scale package. Implementations may include providing a semiconductor wafer having a pixel array, forming a first cavity through the wafer and/or one or more layers coupled over the wafer, filling the first cavity with a fill material, planarizing the fill material and/or the one or more layers to form a first surface of the fill material coplanar with a first surface of the one or more layers, and bonding a transparent cover over the fill material and the one or more layers. The bond may be a fusion bond between the transparent cover and a passivation oxide; a fusion bond between the transparent cover and an anti-reflective coating; a bond between the transparent cover and an organic adhesive coupled over the fill material, and/or; a bond between a first metallized surface of the transparent cover and a metallized layer coupled over the wafer.

公开(公告)号：US20200021754A1

公开(公告)日：2020-01-16

申请号：US16032957

申请日：2018-07-11

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Swarnal BORTHAKUR

IPC: H04N5/355 ,  H04N5/235 ,  H01L27/146 ,  H01L33/42 ,  H01L33/20 ,  H04N9/04

Abstract: Various embodiments of the present technology may comprise methods and apparatus for increasing dynamic range of an image sensor. According to an exemplary embodiment, the image sensor comprises a backside-illuminated hybrid bonded stacked chip image senor having a pixel circuit array. A capacitor is formed on each pixel circuit along two adjacent sidewalls of an epitaxial substrate layer facing a deep trench isolation region. The capacitor may also extend along an upper surface of the epitaxial substrate layer.

公开(公告)号：US20190189663A1

公开(公告)日：2019-06-20

申请号：US16282547

申请日：2019-02-22

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Larry Duane KINSMAN ,  Swarnal BORTHAKUR ,  Marc Allen SULFRIDGE ,  Scott Donald CHURCHWELL ,  Brian VAARTSTRA

IPC: H01L27/146

CPC classification number: H01L27/14621 ,  H01L27/14618 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14685 ,  H01L27/14687

Abstract: An image sensor package may include a semiconductor wafer having a pixel array, a color filter array (CFA) formed over the pixel array, and one or more lenses formed over the CFA. A light block layer may couple over the semiconductor wafer around a perimeter of the lenses and an encapsulation layer may be coupled around the perimeter of the lenses and over the light block layer. The light block layer may form an opening providing access to the lenses. A mold compound layer may be coupled over the encapsulation layer and the light block layer. A temporary protection layer may be used to protect the one or more lenses from contamination during application of the mold compound and/or during processes occurring outside of a cleanroom environment.

公开(公告)号：US20190189662A1

公开(公告)日：2019-06-20

申请号：US16282495

申请日：2019-02-22

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Larry Duane KINSMAN ,  Swarnal BORTHAKUR ,  Marc Allen SULFRIDGE ,  Scott Donald CHURCHWELL ,  Brian VAARTSTRA

IPC: H01L27/146

CPC classification number: H01L27/14621 ,  H01L27/14618 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14685 ,  H01L27/14687

Abstract: An image sensor package may include a semiconductor wafer having a pixel array, a color filter array (CFA) formed over the pixel array, and one or more lenses formed over the CFA. A light block layer may couple over the semiconductor wafer around a perimeter of the lenses and an encapsulation layer may be coupled around the perimeter of the lenses and over the light block layer. The light block layer may form an opening providing access to the lenses. A mold compound layer may be coupled over the encapsulation layer and the light block layer. A temporary protection layer may be used to protect the one or more lenses from contamination during application of the mold compound and/or during processes occurring outside of a cleanroom environment.

公开(公告)号：US20180090532A1

公开(公告)日：2018-03-29

申请号：US15276504

申请日：2016-09-26

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Swarnal BORTHAKUR ,  Larry Duane KINSMAN

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14612 ,  H01L27/1462 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/1469

Abstract: An image sensor may include an infrared radiation-blocking layer. The infrared radiation-blocking layer may block infrared radiation from reflecting off of metal layers formed beneath pixel structures in the image sensor so that the reflected light does not reach the photodiodes. The infrared radiation-blocking layer may be formed between a backside redistribution layer and an epitaxial silicon layer in which pixel structures such as photodiodes and transistors are formed. The infrared radiation-blocking layer may be formed from a pre-existing metal layer between the backside redistribution layer and the epitaxial silicon layer. The infrared radiation-blocking layer may prevent the image sensor from generating inadvertent photocurrents in response to reflected infrared light.

公开(公告)号：US20170141146A1

公开(公告)日：2017-05-18

申请号：US15139505

申请日：2016-04-27

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Aaron BELSHER ,  Richard MAURITZSON ,  Swarnal BORTHAKUR ,  Ulrich BOETTIGER

IPC: H01L27/146

CPC classification number: H01L27/14603 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14689

Abstract: A backside illuminated image sensor with an array of pixels formed in a substrate is provided. To improve surface planarity, bond pads formed at the periphery of the array of pixels may be recessed into a back surface of the substrate. The bond pads may be recessed into a semiconductor layer of the substrate, may be recessed into a window in the semiconductor layer, or may be recessed in a passivation layer and covered with non-conductive material such as resin. In order to further improve surface planarity, a window may be formed in the semiconductor layer at the periphery of the array of pixels, or scribe region, over alignment structures. By providing an image sensor with improved surface planarity, device yield and time-to-market may be improved, and window framing defects and microlens/color filter non-uniformity may be reduced.

公开(公告)号：US20240145515A1

公开(公告)日：2024-05-02

申请号：US18558593

申请日：2022-04-27

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Swarnal BORTHAKUR ,  Mario M. PELELLA ,  Chandrasekharan KOTHANDARAMAN ,  Marc Allen SULFRIDGE ,  Yusheng LIN ,  Larry Duane KINSMAN

IPC: H01L27/146 ,  H01L23/00

CPC classification number: H01L27/14634 ,  H01L24/05 ,  H01L24/06 ,  H01L24/08 ,  H01L24/19 ,  H01L24/20 ,  H01L24/94 ,  H01L24/96 ,  H01L27/14636 ,  H01L24/13 ,  H01L24/32 ,  H01L24/80 ,  H01L2224/05647 ,  H01L2224/06181 ,  H01L2224/08145 ,  H01L2224/08225 ,  H01L2224/13025 ,  H01L2224/19 ,  H01L2224/211 ,  H01L2224/32225 ,  H01L2224/80357 ,  H01L2224/80379 ,  H01L2224/80896 ,  H01L2224/94 ,  H01L2224/96 ,  H01L2924/05442

Abstract: An integrated circuit package (34, 34′, 34″) may be implemented by stacked first, second, and third integrated circuit dies (40, 50, 60). The first and second dies (40, 50) may be bonded to each other using corresponding inter-die connection structures (74-1, 84-1) at respective interfacial surfaces facing the other die. The second die (50) may also include a metal layer (84-2) for connecting to the third die (60) at its interfacial surface with the first die (40). The metal layer (84-2) may be connected to a corresponding inter-die connection structure (64) on the side of the third die (60) facing the second die (50) through a conductive through-substrate via (84-2) and an additional metal layer (102) in a redistribution layer (96) between the second and third dies (50, 60). The third die (60) may have a different lateral outline than the second die (50).

公开(公告)号：US20230215960A1

公开(公告)日：2023-07-06

申请号：US18174017

申请日：2023-02-24

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Swarnal BORTHAKUR ,  Marc Allen SULFRIDGE

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14645 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14636

Abstract: An imaging device may include single-photon avalanche diodes (SPADs). To improve the sensitivity and signal-to-noise ratio of the SPADs, light scattering structures may be formed in the semiconductor substrate to increase the path length of incident light through the semiconductor substrate. To mitigate crosstalk, an isolation structure may be formed in a ring around the SPAD. The isolation structure may be a hybrid isolation structure with both a metal filler that absorbs light and a low-index filler that reflects light. The isolation structure may be formed as a single trench or may include a backside deep trench isolation portion and a front side deep trench isolation portion. The isolation structure may also include a color filtering material.