公开(公告)号：US20200373433A1

公开(公告)日：2020-11-26

申请号：US16645522

申请日：2018-10-12

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Toshimitsu OBONAI ,  Yasuharu HOSAKA ,  Mitsuo MASHIYAMA ,  Toshikatsu KUNII ,  Hironobu TAKAHASHI ,  Kenichi OKAZAKI

IPC: H01L29/786 ,  H01L29/66

Abstract: A semiconductor device with favorable electrical characteristics is provided. A semiconductor device with stable electrical characteristics is provided. The semiconductor device is configured to include a first insulating layer, a second insulating layer, a third insulating layer, a first conductive layer, and a semiconductor layer. The semiconductor layer is positioned over the first insulating layer. The first conductive layer is positioned over the semiconductor layer. The second insulating layer covers a side surface and a bottom surface of the first conductive layer. The third insulating layer is in contact with a top surface of the first insulating layer and part of a top surface of the semiconductor layer and covers a side surface of the second insulating layer. The semiconductor layer contains a metal oxide, the first insulating layer and the second insulating layer each contain an oxide, and the third insulating layer contains a metal nitride.