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    Semiconductor Device
    1.
    发明申请
    Semiconductor Device 有权
    半导体器件

    公开(公告)号：US20150155387A1

    公开(公告)日：2015-06-04

    申请号：US14556769

    申请日：2014-12-01

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei Yamazaki ,  Masahiro KATAYAMA ,  Chieko MISAWA ,  Yuka YOKOYAMA ,  Hironobu TAKAHASHI ,  Kenichi OKAZAKI

    IPC: H01L29/786 ,  H01L29/51 ,  H01L29/49

    CPC classification number: H01L29/7869 ,  G02F1/1368 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/78606

    Abstract: A highly reliable semiconductor device which uses an oxide semiconductor film for a backplane is provided. A semiconductor device includes a first conductive film, a first insulating film over the first conductive film, an oxide semiconductor film which is over the first insulating film and overlaps with the first conductive film, a second insulating film over the oxide semiconductor film, and a pair of second conductive films electrically connected to the oxide semiconductor film through an opening portion included in the second insulating film. The second insulating film overlaps with a region of the oxide insulating film in which a carrier flows between the pair of second conductive films and overlaps with end portions of the oxide semiconductor film.

    Abstract translation: 提供了一种使用用于背板的氧化物半导体膜的高度可靠的半导体器件。 半导体器件包括第一导电膜，第一导电膜上的第一绝缘膜，在第一绝缘膜之上并与第一导电膜重叠的氧化物半导体膜，氧化物半导体膜上的第二绝缘膜，以及 一对第二导电膜通过包含在第二绝缘膜中的开口部与氧化物半导体膜电连接。 第二绝缘膜与载体在一对第二导电膜之间流动并与氧化物半导体膜的端部重叠的氧化物绝缘膜的区域重叠。

    SEMICONDUCTOR DEVICE
    2.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20200373433A1

    公开(公告)日：2020-11-26

    申请号：US16645522

    申请日：2018-10-12

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Shunpei YAMAZAKI ,  Toshimitsu OBONAI ,  Yasuharu HOSAKA ,  Mitsuo MASHIYAMA ,  Toshikatsu KUNII ,  Hironobu TAKAHASHI ,  Kenichi OKAZAKI

    IPC: H01L29/786 ,  H01L29/66

    Abstract: A semiconductor device with favorable electrical characteristics is provided. A semiconductor device with stable electrical characteristics is provided. The semiconductor device is configured to include a first insulating layer, a second insulating layer, a third insulating layer, a first conductive layer, and a semiconductor layer. The semiconductor layer is positioned over the first insulating layer. The first conductive layer is positioned over the semiconductor layer. The second insulating layer covers a side surface and a bottom surface of the first conductive layer. The third insulating layer is in contact with a top surface of the first insulating layer and part of a top surface of the semiconductor layer and covers a side surface of the second insulating layer. The semiconductor layer contains a metal oxide, the first insulating layer and the second insulating layer each contain an oxide, and the third insulating layer contains a metal nitride.

    IMAGING DEVICE
    3.
    发明申请
    IMAGING DEVICE 有权
    成像装置

    公开(公告)号：US20150060675A1

    公开(公告)日：2015-03-05

    申请号：US14467161

    申请日：2014-08-25

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Kengo AKIMOTO ,  Junichi KOEZUKA ,  Hironobu TAKAHASHI

    IPC: G01T1/20 ,  H01L27/146

    CPC classification number: G01T1/2018 ,  A61B6/4208 ,  H01L27/14663

    Abstract: To provide an imaging device that is highly stable when exposed to radiation such as X-rays. The imaging device includes a substrate, a pixel circuit, and a scintillator which are stacked in order. The pixel circuit includes a light-receiving element and a circuit portion electrically connected to the light-receiving element. The substrate is provided with a heater. A transistor in the pixel circuit is heated by the passage of a current through the heater at times other than imaging, thus, degradation of the electrical characteristics of the transistor due to X-ray irradiation can be recovered.

    Abstract translation: 提供当暴露于诸如X射线的辐射时高度稳定的成像装置。 成像装置包括依次层叠的基板，像素电路和闪烁体。 像素电路包括光接收元件和电连接到光接收元件的电路部分。 基板设有加热器。 像素电路中的晶体管通过在成像之外的时间通过加热器的电流而被加热，因此可以恢复由于X射线照射引起的晶体管的电特性的劣化。

    IMAGING DEVICE
    5.
    发明申请
    IMAGING DEVICE 有权
    成像装置

    公开(公告)号：US20140374745A1

    公开(公告)日：2014-12-25

    申请号：US14303629

    申请日：2014-06-13

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Hironobu TAKAHASHI ,  Yukinori SHIMA ,  Yasuharu HOSAKA ,  Toshimitsu OBONAI ,  Masashi TSUBUKU

    IPC: H01L27/146 ,  H01L29/786

    CPC classification number: H01L27/14663 ,  H01L27/14616 ,  H01L27/14625 ,  H01L27/14692 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/7869 ,  H04N5/3745

    Abstract: An imaging device that is highly stable to irradiation with radial rays such as X-rays and can inhibit a decrease in electrical characteristics is provided. The imaging device takes an image with radial rays such as X-rays and includes pixel circuits arranged in a matrix and a scintillator overlapping the pixel circuits. The pixel circuits each includes a switching transistor with an extremely small off-state current and a light-receiving element which is configured to convert the radial rays to electrical charges. A gate insulating film of the switching transistor has a stacked structure including a silicon nitride film with a thickness of 100 nm to 400 nm and a silicon oxide film or a silicon oxynitride film with a thickness of 5 nm to 20 nm.

    Abstract translation: 提供了对X射线等径向射线照射高度稳定的成像装置，能够抑制电特性的降低。 成像装置拍摄具有诸如X射线的径向射线的图像，并且包括以矩阵布置的像素电路和与像素电路重叠的闪烁体。 像素电路各自包括非常小的截止电流的开关晶体管和被配置为将径向射线转换成电荷的光接收元件。 开关晶体管的栅极绝缘膜具有包括厚度为100nm至400nm的氮化硅膜和厚度为5nm至20nm的氧化硅膜或氮氧化硅膜的叠层结构。

    IMAGING DEVICE
    6.
    发明申请
    IMAGING DEVICE 有权
    成像装置

    公开(公告)号：US20150364513A1

    公开(公告)日：2015-12-17

    申请号：US14731954

    申请日：2015-06-05

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Hironobu TAKAHASHI ,  Yukinori SHIMA ,  Kengo AKIMOTO ,  Junichi KOEZUKA ,  Naoto KUSUMOTO

    IPC: H01L27/146 ,  H01L29/786

    CPC classification number: H01L27/14616 ,  H01L27/1225 ,  H01L27/14632 ,  H01L27/14663

    Abstract: An imaging device with high imaging quality capable of being manufactured at low cost is provided. The imaging device includes a first transistor, a second transistor, a third transistor, a fourth transistor, a photodiode, and a capacitor. Each of the first to the fourth transistors includes a first gate electrode and a second gate electrode, and the second gate electrode of each of the first to the fourth transistors and one electrode of the capacitor are electrically connected to an anode electrode of the photodiode.

    Abstract translation: 提供了能够以低成本制造的具有高成像质量的成像装置。 成像装置包括第一晶体管，第二晶体管，第三晶体管，第四晶体管，光电二极管和电容器。 第一至第四晶体管中的每一个包括第一栅电极和第二栅电极，第一至第四晶体管中的每一个的第二栅电极和电容器的一个电极与光电二极管的阳极电连接。

    IMAGING DEVICE
    7.
    发明申请
    IMAGING DEVICE 有权
    成像装置

    公开(公告)号：US20140239183A1

    公开(公告)日：2014-08-28

    申请号：US14187909

    申请日：2014-02-24

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Kengo AKIMOTO ,  Hironobu TAKAHASHI ,  Hiroshi KANEMURA ,  Akiharu MIYANAGA

    IPC: G01T1/20

    CPC classification number: G01T1/2018

    Abstract: An imaging device which is highly stable to irradiation with radiations such as X-rays and can inhibit a decrease in electrical characteristics is provided. The imaging device obtains an image using radiations such as X-rays and includes pixel circuits which are arranged in a matrix and which a scintillator overlaps. Each of the pixel circuits includes a switching transistor whose off-state current is extremely low and a light-receiving element. A shielding layer formed using a metal material and the like overlaps the transistor and the light-receiving element. With the structure, an imaging device which is highly stable to irradiation with radiations such as X-rays and can inhibit a decrease in electrical characteristics can be provided.

    Abstract translation: 提供了一种对诸如X射线的辐射照射高度稳定并且可以抑制电特性降低的成像装置。 成像装置使用诸如X射线的辐射获得图像，并且包括排列成矩阵并且闪烁体重叠的像素电路。 每个像素电路包括截止电流极低的开关晶体管和光接收元件。 使用金属材料等形成的屏蔽层与晶体管和光接收元件重叠。 通过该结构，可以提供对X射线等照射进行照射高度稳定并能够抑制电特性降低的成像装置。

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