公开(公告)号：US20170148633A1

公开(公告)日：2017-05-25

申请号：US15424470

申请日：2017-02-03

Applicant: SEN CORPORATION

Inventor： Shiro NINOMIYA ,  Tetsuya KUDO

IPC: H01L21/265 ,  C23C14/54 ,  C23C14/48

CPC classification number: H01L21/26586 ,  C23C14/48 ,  C23C14/54 ,  H01J37/3171 ,  H01J2237/20214 ,  H01J2237/20228 ,  H01J2237/30483 ,  H01J2237/3171

Abstract: An ion implantation method in which an ion beam is scanned in a beam scanning direction and a wafer is mechanically scanned in a direction perpendicular to the beam scanning direction, includes setting a wafer rotation angle with respect to the ion beam so as to be varied, wherein a set angle of the wafer rotation angle is changed in a stepwise manner so as to implant ions into the wafer at each set eagle, and wherein a wafer scanning region length is set to be varied, and, at the same time, a beam scanning speed of the ion beam is changed, in ion implantation at each set angle in a plurality of ion implantation operations during one rotation of the wafer, such that the ions are implanted into the wafer and dose amount non-uniformity in a wafer surface in other semiconductor manufacturing processes is corrected.