公开(公告)号：US08497486B1

公开(公告)日：2013-07-30

申请号：US13651685

申请日：2012-10-15

申请人： Varian Semiconductor Equipment Associates, Inc.

发明人： Jeffrey Charles Blahnik ,  William T. Weaver

IPC分类号： H01J49/10 ,  H01J37/317 ,  H01J27/02 ,  H01J3/07

CPC分类号： H01J27/024 ,  H01J27/08 ,  H01J37/08 ,  H01J37/302 ,  H01J37/3171 ,  H01J2237/043 ,  H01J2237/30472 ,  H01J2237/3171

摘要： An ion source includes arc chamber housing defining an arc chamber. The arc chamber housing has an extraction plate in a fixed position, and the extraction plate defines a plurality of extraction apertures. The ion source also includes a shutter assembly positioned outside of the arc chamber proximate the extraction plate. The shutter assembly is configured to block at least a portion of one of the plurality of extraction apertures during one time interval. The ion source combined with relative movement of a workpiece to be treated with an ion beam extracted from the ion source enables a two dimensional ion implantation pattern to be formed on the workpiece using only one ion source.

摘要翻译： 离子源包括限定电弧室的电弧室壳体。 电弧室壳体具有固定位置的提取板，并且提取板限定多个提取孔。 离子源还包括位于靠近提取板的弧形室外部的快门组件。 快门组件构造成在一个时间间隔期间阻挡多个提取孔中的一个的至少一部分。 离子源与从离子源提取的离子束相关的待处理工件的相对移动结合使得仅使用一个离子源就能在工件上形成二维离子注入图案。

公开(公告)号：US07791041B2

公开(公告)日：2010-09-07

申请号：US12233151

申请日：2008-09-18

申请人： Takatoshi Yamashita ,  Tadashi Ikejiri ,  Keiko Kuzawa ,  Hideyuki Fujiwara

发明人： Takatoshi Yamashita ,  Tadashi Ikejiri ,  Keiko Kuzawa ,  Hideyuki Fujiwara

IPC分类号： H01J37/08 ,  H01J27/02 ,  H01J27/08

CPC分类号： H01J27/14 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/061 ,  H01J2237/082 ,  H01J2237/083 ,  H01J2237/24542 ,  H01J2237/304 ,  H01J2237/30472 ,  H01J2237/31708 ,  H01J2237/3171

摘要： This ion source generates a ribbon-like ion beam whose dimension in the Y direction is larger than the dimension in the X direction. This ion source includes a plasma generating vessel having an ion extraction port extending in the Y direction, a plurality of cathodes arranged in a plurality of stages along the Y direction on one side in the X direction in the plasma generating vessel, a reflecting electrode arranged on the other side in the X direction in the plasma generating vessel opposite to the cathodes, and electromagnets for generating magnetic fields along the X direction in regions including the plurality of cathodes in the plasma generating vessel.

摘要翻译： 该离子源产生其Y方向的尺寸大于X方向的尺寸的带状离子束。 该离子源包括具有沿Y方向延伸的离子提取口的等离子体发生容器，在等离子体发生容器中沿着X方向的一侧沿着Y方向排列成多个的多个阴极，反射电极配置 在与阴极相反的等离子体发生容器中的X方向的另一侧，以及用于在等离子体发生容器中包括多个阴极的区域沿着X方向产生磁场的电磁体。

公开(公告)号：US07442946B2

公开(公告)日：2008-10-28

申请号：US11315776

申请日：2005-12-21

申请人： Min Yong Lee

发明人： Min Yong Lee

IPC分类号： H01J37/08

CPC分类号： H01J37/3172 ,  H01J37/302 ,  H01J2237/20228 ,  H01J2237/3171 ,  H01L21/26513

摘要： A nonuniform ion implantation apparatus comprises a wide ion beam generator for generating a wide ion beam including a plurality of wide ion beams irradiated on at least two sections among a plurality of sections into which a wafer is divided, and a wafer drive unit for vertically reciprocating the wafer while the wide ion beam generated by the wide ion beam generator is irradiated on the wafer. At least one of the wide ion beams has a dose different from that of at least another wide ion beam.

摘要翻译： 不均匀离子注入装置包括宽离子束发生器，用于产生宽离子束，该宽离子束包括在分割晶片的多个部分中的至少两个部分上照射的多个宽离子束;以及用于垂直往复运动的晶片驱动单元 而宽的离子束发生器产生的宽离子束被照射在晶片上。 至少一个宽离子束的剂量与至少另一个宽离子束的剂量不同。

公开(公告)号：US20190074158A1

公开(公告)日：2019-03-07

申请号：US15905896

申请日：2018-02-27

申请人： Toshiba Memory Corporation

发明人： Tsuyoshi Fujii ,  Takayuki Ito ,  Yasunori Oshima

IPC分类号： H01J37/24 ,  H01J37/317 ,  H01J37/147 ,  H01J37/08 ,  H01J37/20

CPC分类号： H01J37/243 ,  H01J37/08 ,  H01J37/1477 ,  H01J37/20 ,  H01J37/3023 ,  H01J37/3171 ,  H01J2237/032 ,  H01J2237/047 ,  H01J2237/0473 ,  H01J2237/1507 ,  H01J2237/20207 ,  H01J2237/30461 ,  H01J2237/31703 ,  H01J2237/3171

摘要： In one embodiment, an ion implantation apparatus includes an ion source configured to generate an ion beam. The apparatus further includes a scanner configured to change an irradiation position with the ion beam on an irradiation target. The apparatus further includes a first electrode configured to accelerate an ion in the ion beam. The apparatus further includes a controller configured to change at least any of energy and an irradiation angle of the ion beam according to the irradiation position by controlling the ion beam having been generated from the ion source.

公开(公告)号：US09601314B2

公开(公告)日：2017-03-21

申请号：US13495888

申请日：2012-06-13

申请人： Shiro Ninomiya ,  Tetsuya Kudo

发明人： Shiro Ninomiya ,  Tetsuya Kudo

IPC分类号： H01J37/317

CPC分类号： H01L21/26586 ,  C23C14/48 ,  C23C14/54 ,  H01J37/3171 ,  H01J2237/20214 ,  H01J2237/20228 ,  H01J2237/30483 ,  H01J2237/3171

摘要： An ion implantation method in which an ion beam is scanned in a beam scanning direction and a wafer is mechanically scanned in a direction perpendicular to the beam scanning direction, includes setting a wafer rotation angle with respect to the ion beam so as to be varied, wherein a set angle of the wafer rotation angle is changed in a stepwise manner so as to implant ions into the wafer at each set angle, and wherein a wafer scanning region length is set to be varied, and, at the same time, a beam scanning speed of the ion beam is changed, in ion implantation at each set angle in a plurality of ion implantation operations during one rotation of the wafer, such that the ions are implanted into the wafer and dose amount non-uniformity in a wafer surface in other semiconductor manufacturing processes is corrected.

公开(公告)号：US08048788B2

公开(公告)日：2011-11-01

申请号：US12575887

申请日：2009-10-08

申请人： John J. Hautala ,  Noel Russell

发明人： John J. Hautala ,  Noel Russell

IPC分类号： H01L21/425

CPC分类号： H01J37/3178 ,  C23C14/221 ,  C23C14/50 ,  H01J37/3053 ,  H01J2237/31701 ,  H01J2237/3171 ,  H01J2237/31732 ,  H01J2237/3174 ,  H01L21/26513 ,  H01L21/26566 ,  H01L21/26586 ,  H01L29/66795 ,  H01L29/66803 ,  H01L29/785

摘要： A method for treating a structure is described. One embodiment includes forming a structure on a substrate, wherein the structure has a plurality of surfaces including one or more first surfaces lying substantially parallel to a first plane parallel with said substrate and one or more second surfaces lying substantially perpendicular to the first plane. Additionally, the method comprises directing a gas cluster ion beam (GCIB) formed from a material source toward the substrate with a direction of incidence, and orienting the substrate relative to the direction of incidence. The method further comprises treating the one or more second surfaces.

摘要翻译： 描述了一种处理结构的方法。 一个实施例包括在基底上形成结构，其中该结构具有包括一个或多个第一表面的多个表面，该第一表面基本上平行于与所述基底平行的第一平面，以及基本上垂直于第一平面的一个或多个第二表面。 此外，该方法包括将由材料源形成的气体簇离子束（GCIB）引导到具有入射方向的衬底，并且使衬底相对于入射方向取向。 该方法还包括处理一个或多个第二表面。

公开(公告)号：US20060258128A1

公开(公告)日：2006-11-16

申请号：US11329761

申请日：2006-01-11

申请人： Peter Nunan ,  Anthony Renau ,  Alan Sheng ,  Paul Murphy ,  Kyu-Ha Shim ,  Charles Teodorczyk ,  Steven Anella ,  Samuel Barsky ,  Lawrence Ficarra ,  Richard Hertel

发明人： Peter Nunan ,  Anthony Renau ,  Alan Sheng ,  Paul Murphy ,  Kyu-Ha Shim ,  Charles Teodorczyk ,  Steven Anella ,  Samuel Barsky ,  Lawrence Ficarra ,  Richard Hertel

IPC分类号： H01L21/677 ,  H01L21/04

CPC分类号： H01L21/67745 ,  H01J37/09 ,  H01J2237/31701 ,  H01J2237/3171 ,  H01J2237/31711 ,  H01L21/67213 ,  H01L21/68707

摘要： Substrate masking apparatus includes a platen assembly to support a substrate for processing, a mask having an aperture, a retaining mechanism to retain the mask in a masking position, and a positioning mechanism to change the relative positions of the mask and the substrate so that different areas of the substrate are exposed through the aperture in the mask. The apparatus may further include a mask loading mechanism to transfer the mask to and between the masking position and a non-masking position. The processing may include ion implantation of the substrate with different implant parameter values in different areas. In other embodiments, an area of the substrate to be processed is selectable by a mask, a shutter or a beam modifier in front of the substrate.

摘要翻译： 基板掩蔽装置包括支撑用于处理的基板的压板组件，具有孔的掩模，将掩模保持在遮蔽位置的保持机构以及改变掩模和基板的相对位置的定位机构，使得不同 衬底的区域通过掩模中的孔露出。 该装置还可以包括掩模加载机构，用于将掩模传送到掩蔽位置和非掩蔽位置之间。 该处理可以包括在不同区域中具有不同植入参数值的衬底的离子注入。 在其他实施例中，待处理的基板的区域可以通过基板前面的掩模，快门或光束修正器来选择。

公开(公告)号：US07126139B2

公开(公告)日：2006-10-24

申请号：US10683488

申请日：2003-10-09

申请人： Thomas Schenkel ,  Ivo W. Rangelow ,  Jan Meijer

发明人： Thomas Schenkel ,  Ivo W. Rangelow ,  Jan Meijer

IPC分类号： G02B6/26 ,  H01J37/00

CPC分类号： H01J37/3172 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3045 ,  H01J37/3174 ,  H01J2237/30438 ,  H01J2237/30488 ,  H01J2237/3171 ,  H01J2237/31737

摘要： A device and a method for positionally accurate implantation of individual particles in a substrate surface (1a) are described. A diaphragm for a particle beam to be directed onto the substrate surface (1a) and a detector provided thereon in the form of a p-n junction for determining a secondary electron flow produced upon impact of a particle onto the substrate surface (1a) are provided on a tip (4) which is formed on a free end portion of a flexible arm (2) to be mounted on one side. The device is part of a scanning device operating according to the AFM method.

摘要翻译： 描述了用于将单个颗粒定位在衬底表面（1a）中的位置精确植入的装置和方法。 用于将粒子束引导到衬底表面（1a）上的膜片和以pn结形式设置在其上的检测器，用于确定在颗粒撞击到衬底表面（1a）上产生的二次电子流时， 设置在安装在一侧的柔性臂（2）的自由端部上的尖端（4）上。 该设备是根据AFM方法操作的扫描设备的一部分。

公开(公告)号：US09697989B2

公开(公告)日：2017-07-04

申请号：US14632719

申请日：2015-02-26

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： Cheng-Ta Wu ,  Tsung Han Wu ,  Yao-Wen Hsu ,  Lun-Kuang Tan ,  Wei-Ming You ,  Ting-Chun Wang

IPC分类号： G21K5/10 ,  H01J37/317 ,  H01J37/302 ,  H01J37/304

CPC分类号： H01J37/3172 ,  H01J37/3026 ,  H01J37/304 ,  H01J2237/2814 ,  H01J2237/2815 ,  H01J2237/2817 ,  H01J2237/30461 ,  H01J2237/30483 ,  H01J2237/31703 ,  H01J2237/3171

摘要： The present disclosure provides a method for generating a parameter pattern including: performing a plurality of measurements upon a plurality of regions on a surface of a workpiece to obtain a plurality of measured results; and deriving a parameter pattern according to the plurality of measured results by a computer; wherein the parameter pattern includes a plurality of regional parameter values corresponding to each of the plurality of regions on the surface of the workpiece. The present disclosure provides a Feed Forward semiconductor manufacturing method including: forming a layer with a desired pattern on a surface of a workpiece; deriving a control signal including a parameter pattern according to spatial dimension measurements against the layer with the desired pattern distributed over a plurality of regions of the surface of the workpiece; and performing an ion implantation on the surface of the workpiece according to the control signal.

公开(公告)号：US20160254122A1

公开(公告)日：2016-09-01

申请号：US14632719

申请日：2015-02-26

申请人： Taiwan Semiconductor Manufacturing Company Ltd.

发明人： CHENG-TA WU ,  TSUNG HAN WU ,  YAO-WEN HSU ,  LUN-KUANG TAN ,  WEI-MING YOU ,  TING-CHUN WANG

IPC分类号： H01J37/317

CPC分类号： H01J37/3172 ,  H01J37/3026 ,  H01J37/304 ,  H01J2237/2814 ,  H01J2237/2815 ,  H01J2237/2817 ,  H01J2237/30461 ,  H01J2237/30483 ,  H01J2237/31703 ,  H01J2237/3171

摘要： The present disclosure provides a method for generating a parameter pattern including: performing a plurality of measurements upon a plurality of regions on a surface of a workpiece to obtain a plurality of measured results; and deriving a parameter pattern according to the plurality of measured results by a computer; wherein the parameter pattern includes a plurality of regional parameter values corresponding to each of the plurality of regions on the surface of the workpiece. The present disclosure provides a Feed Forward semiconductor manufacturing method including: forming a layer with a desired pattern on a surface of a workpiece; deriving a control signal including a parameter pattern according to spatial dimension measurements against the layer with the desired pattern distributed over a plurality of regions of the surface of the workpiece; and performing an ion implantation on the surface of the workpiece according to the control signal.

摘要翻译： 本公开提供了一种用于生成参数图案的方法，包括：在工件的表面上的多个区域上执行多个测量以获得多个测量结果; 以及通过计算机根据所述多个测量结果导出参数模式; 其中所述参数图案包括对应于所述工件表面上的所述多个区域中的每一个的多个区域参数值。 本公开内容提供了一种前馈半导体制造方法，包括：在工件的表面上形成具有期望图案的层; 根据针对分布在所述工件的所述表面的多个区域上的期望图案的所述层，根据针对所述层的空间尺寸测量结果导出包括参数图案的控制信号; 并根据控制信号在工件的表面上进行离子注入。