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公开(公告)号：US11850805B2
公开(公告)日：2023-12-26
申请号：US17365105
申请日：2021-07-01
发明人： Taek Dong Chung , Young-Chang Joo , Jeong-Yun Sun , Seok Hee Han , Sung Il Kim , Hae-Ryung Lee , Seung-Min Lim
CPC分类号： B29C66/026 , B29C35/0805 , B29C66/712 , B29C66/72 , B29C66/723 , B29C66/7316 , C08G77/38 , C08G77/392 , C08L83/04 , B29C2035/0827 , C08L2203/20 , H01L29/66136
摘要： A method for manufacturing a PDMS device in accordance with an exemplary embodiment of the present invention surface treats the entire surface of a pattern with a thiol group (—SH), so that a hydrogel may be connected to the surface of the pattern by a covalent bond under ultraviolet rays. Therefore, a PDMS device manufactured by the above method has an advantage in that the shape thereof may be stably maintained without the swelling or desorption of a hydrogel even when an electrolyte is filled in a pattern.
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公开(公告)号：US11474069B2
公开(公告)日：2022-10-18
申请号：US16887895
申请日：2020-05-29
发明人： Jeong-Yun Sun , Young-Chang Joo , Taek Dong Chung , Hae-Ryung Lee , Seung-Min Lim , Seok Hee Han , Hyunjae Yoo
IPC分类号： G01N27/414
摘要： Disclosed is an open-junction ionic transistor which includes: a substrate; a p type gel which is formed as a polyelectrolyte gel on the substrate; an n type gel which is formed as the polyelectrolyte gel on the substrate and having one side contacting one side of the p type gel; a first reservoir contacting the other side of the p type gel; a second reservoir contacting the other side of the n type gel; and an encapsulation layer covering the p type gel, the n type gel, the first reservoir, and the second reservoir, in which on the encapsulation layer, an injection unit for injecting an ion input is formed at a location corresponding to an interface contacting the p type gel and the n type gel and when reverse bias voltage is applied between the p type gel and the n type gel, the ion input injected through the injection unit is amplified and ionic current peak is generated.
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