PHOTONIC CRYSTAL SEMICONDUCTOR LASER DEVICE AND METHOD FOR MANUFACTURING SAME

    公开(公告)号:US20240170918A1

    公开(公告)日:2024-05-23

    申请号:US18550592

    申请日:2022-03-17

    CPC classification number: H01S5/11 H01S5/04256 H01S5/222 H01S5/343

    Abstract: An embodiment of the present invention provides a photonic crystal semiconductor laser device including an n-type clad layer formed on a first surface of an n-type first substrate, a guide layer formed on the n-type clad layer and including an active layer, a p-type clad layer formed on the guide layer, a p-type contact layer formed on the p-type clad layer, a p-type electrode layer formed on the p-type contact layer, and an n-type electrode layer contacting at least a portion of the first surface of the n-type first substrate or a second surface opposing the first surface, wherein holes penetrating the p-type contact layer, the p-type clad layer, the guide layer including the active layer, and the n-type clad layer are formed in the p-type contact layer, the p-type clad layer, the guide layer including the active layer, and the n-type clad layer, and the holes form a photonic crystal pattern.

    PHOTONIC CRYSTAL LASER DEVICE AND METHOD FOR MANUFACTURING THE SAME

    公开(公告)号:US20240388059A1

    公开(公告)日:2024-11-21

    申请号:US18662489

    申请日:2024-05-13

    Abstract: Provided is a photonic crystal laser device including a lower electrode layer on a top surface or bottom surface of a substrate, a guide layer on the lower electrode layer, an upper electrode layer on the guide layer, a lower clad layer between the lower electrode layer and the guide layer, and an upper clad layer between the guide layer and the upper electrode layer. The guide layer includes an active layer therein. A crystal hole is provided that penetrates the upper clad layer in a vertical direction and extends toward the guide layer. A lower end of the crystal hole is defined to be at a height higher than or at the same height as a top surface of the active layer.

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