公开(公告)号：US20240170918A1

公开(公告)日：2024-05-23

申请号：US18550592

申请日：2022-03-17

Applicant: SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION

Inventor： Heonsu JEON ,  Myeong Eun KIM

IPC: H01S5/11 ,  H01S5/042 ,  H01S5/22 ,  H01S5/343

CPC classification number: H01S5/11 ,  H01S5/04256 ,  H01S5/222 ,  H01S5/343

Abstract: An embodiment of the present invention provides a photonic crystal semiconductor laser device including an n-type clad layer formed on a first surface of an n-type first substrate, a guide layer formed on the n-type clad layer and including an active layer, a p-type clad layer formed on the guide layer, a p-type contact layer formed on the p-type clad layer, a p-type electrode layer formed on the p-type contact layer, and an n-type electrode layer contacting at least a portion of the first surface of the n-type first substrate or a second surface opposing the first surface, wherein holes penetrating the p-type contact layer, the p-type clad layer, the guide layer including the active layer, and the n-type clad layer are formed in the p-type contact layer, the p-type clad layer, the guide layer including the active layer, and the n-type clad layer, and the holes form a photonic crystal pattern.