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公开(公告)号:US11560223B2
公开(公告)日:2023-01-24
申请号:US16760276
申请日:2018-12-11
发明人: Hyoun Jin Kim , Seung Jae Lee
摘要: Provided is a flight vehicle and in particular a flight vehicle in which a main module equipped with a device capable of carrying cargo, photographing, etc. may freely switch directions during flight while applying a posture independent of a thrust module because the thrust module is configured to freely perform roll and pitch motions with respect to the main module.
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公开(公告)号:US11429016B2
公开(公告)日:2022-08-30
申请号:US17290696
申请日:2019-10-31
发明人: Young Jin Jo , Seung Jae Lee , Dong Heon Yoo , Byoung Ho Lee
IPC分类号: G03B21/14 , H04N13/322 , G03B21/20 , H04N13/32 , H04N13/363 , H04N13/398 , H04N9/31
摘要: The present disclosure relates to a projection device, and more particularly, to a projection device including: a projector module configured to provide an image to a screen; and a lens module between a user's eyes and the screen, wherein the project module includes: a display module configured to provide a certain image; and a backlight module configured to provide light to the display module such that the image provided by the display module is projected on the screen, wherein the display module is between the backlight module and the screen, the display module is configured to induce a convergence reaction on the user's eyes such that the image projected on the screen has a convergence distance, and the lens module is configured to induce a focus reaction on the user's eyes and change a focal length of the image reproduced by the display module within a certain range.
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公开(公告)号:US20180061865A1
公开(公告)日:2018-03-01
申请号:US15678503
申请日:2017-08-16
发明人: Jae Heung Ha , Jong Woo Kim , Ji Young Moon , Min Ho Oh , Seung Jae Lee , Yoon Hyeung Cho , Young Cheol Joo , Hyeong Joon Kim , Eun-Kil Park , Sang Jin Han
IPC分类号: H01L27/12 , H01L29/49 , H01L29/786
CPC分类号: H01L27/1225 , H01L29/4908 , H01L29/7869
摘要: A thin film transistor array panel includes a substrate, a gate insulating layer, an interface layer, and a semiconductor layer. The gate insulating layer is disposed on the substrate. The interface layer is disposed on the gate insulating layer. The semiconductor layer is disposed on the interface layer. The interface layer includes a fluorinated silicon oxide. The semiconductor layer includes a p-type oxide semiconductor material.
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