公开(公告)号：US20230155096A1

公开(公告)日：2023-05-18

申请号：US18097313

申请日：2023-01-16

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Tae Gyun KIM ,  June Sik KWAK ,  Kyu Ho LEE

IPC: H01L33/62 ,  H01L33/32 ,  H01L33/38

CPC classification number: H01L33/62 ,  H01L33/32 ,  H01L33/382

Abstract: A deep ultraviolet light-emitting diode is provided. A deep ultraviolet light-emitting diode according to one embodiment comprises: a substrate; an n-type semiconductor layer positioned on the substrate; a mesa which is disposed on the n-type semiconductor layer, comprises an active layer and a p-type semiconductor layer, and has a plurality of via-holes exposing the n-type semiconductor layer; n-ohmic contact layers contacting the n-type semiconductor layer in the via-holes; a p-ohmic contact layer contacting the p-type semiconductor layer; an n-pad metal layer electrically connected to the n-ohmic contact layers; a p-pad metal layer electrically connected to the p-ohmic contact layer; an n-bump electrically connected to the n-pad metal layer; and a p-bump electrically connected to the p-pad metal layer, wherein the p-pad metal layer is formed so as to surround the n-pad metal layer.