公开(公告)号：US11679978B2

公开(公告)日：2023-06-20

申请号：US16759360

申请日：2019-10-14

申请人： SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES

发明人： Zhiyuan Shi ,  Tianru Wu ,  Guangyuan Lu ,  Xiujun Wang ,  Chao Zhang ,  Haomin Wang ,  Xiaoming Xie

IPC分类号： B01J23/755 ,  C01B21/064 ,  B01J23/745 ,  C23C16/34

CPC分类号： C01B21/0641 ,  B01J23/745 ,  B01J23/755 ,  C23C16/342 ,  C01P2002/72 ,  C01P2002/76 ,  C01P2002/82 ,  C01P2004/02 ,  C01P2004/03 ,  C01P2004/04

摘要： The present disclosure provides a method for preparing a multi-layer hexagonal boron nitride film, including: preparing a substrate; preparing a boron-containing solid catalyst, and disposing the boron-containing solid catalyst on the substrate; annealing the boron-containing solid catalyst to melt the boron-containing solid catalyst; feeding a nitrogen-containing gas and a protecting gas to an atmosphere in which the melted boron-containing solid catalyst resides, the nitrogen-containing gas reacts with the boron-containing solid catalyst to form the multi-layer hexagonal boron nitride film on a surface of the substrate. The method for preparing a multi-layer hexagonal boron nitride film can prepare a hexagonal boron nitride film having a lateral size in the order of inches and a thickness from several nanometers to several hundred nanometers on the surface of the substrate, providing a favorable basis for the application of hexagonal boron nitride in the field of two-dimensional material devices.