Nitride crystal substrate and method for manufacturing the same

    公开(公告)号:US12104279B2

    公开(公告)日:2024-10-01

    申请号:US17649983

    申请日:2022-02-04

    Abstract: There is provided a nitride crystal substrate constituted by group-III nitride crystal, containing n-type impurities, with an absorption coefficient α being approximately expressed by equation (1) by a least squares method in a wavelength range of at least 1 μm or more and 3.3 μm or less.








    α
    =


    N
    e


    K


    λ
    a




    (



    where

    1.5
    ×

    10

    -
    19




    K


    6.
    ×

    10

    -
    19




    ,

    a
    =
    3


    )



    ,




    (
    1
    )









    here, a wavelength is λ (μm), an absorption coefficient of the nitride crystal substrate at 27° C. is α (cm−1), a carrier concentration in the nitride crystal substrate is Ne (cm−3), and K and a are constants, wherein an error of an actually measured absorption coefficient with respect to the absorption coefficient α obtained from equation (1) at a wavelength of 2 μm is within +0.1α, and in a reflection spectrum measured by irradiating the nitride crystal substrate with infrared light, there is no peak with a peak top within a wavenumber range of 1,200 cm−1 or more and 1,500 cm−1 or less.

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