公开(公告)号：US20230023499A1

公开(公告)日：2023-01-26

申请号：US17856769

申请日：2022-07-01

申请人： SHARP KABUSHIKI KAISHA

发明人： Manabu DAIO ,  TOMOKO TERANISHI ,  Satoshi IHIDA ,  CHIHIRO TACHINO

IPC分类号： C12M1/34 ,  C12M1/12 ,  C12M3/06 ,  G01N27/414

摘要： A cell culture apparatus includes: a substrate having a first surface; a pair of structures each having a wall surface intersecting the first surface, the wall surfaces facing each other; and an electrode disposed on the first surface and traversing a space between the wall surfaces, the electrode and each of the wail surfaces forming an angle other than 90 degrees.

公开(公告)号：US20230243774A1

公开(公告)日：2023-08-03

申请号：US17928586

申请日：2021-04-21

申请人： SHARP KABUSHIKI KAISHA

发明人： FUMITOSHI YASUO ,  KENICHI KITOH ,  TOMOKO TERANISHI ,  CHIHIRO TACHINO

IPC分类号： G01N27/27 ,  G01N27/414

CPC分类号： G01N27/27 ,  G01N27/4148

摘要： A cell signal measurement electrode plate includes a first transistor including a gate terminal connected to a first selection line and a source terminal connected to a second selection line, a second transistor including a gate terminal connected to a drain terminal of the first transistor, a source terminal connected to an electrode, and a drain terminal connected to a common wiring line, and a first capacitor including one capacitance electrode connected to the drain terminal of the first transistor and another capacitance electrode connected to a capacitance element potential fixing wiring line.

公开(公告)号：US20200078790A1

公开(公告)日：2020-03-12

申请号：US16563344

申请日：2019-09-06

申请人： SHARP KABUSHIKI KAISHA

发明人： CHIHIRO TACHINO ,  KAZUYA TSUJINO ,  ATSUSHI HACHIYA

IPC分类号： B01L3/00

摘要： An electrowetting device includes a first substrate, a plurality of first electrodes formed on the first substrate, a dielectric layer formed on the plurality of first electrodes, a first water-repellent layer formed on the dielectric layer, a second substrate, a second electrode formed on the second substrate, and a second water-repellent layer formed on the second electrode. The first substrate and the second substrate are arranged with a gap between the first water-repellent layer and the second water-repellent layer. The first electrode includes an indium oxide-zinc oxide layer, the dielectric layer includes a silicon nitride layer, and the silicon nitride layer is formed directly on the indium oxide-zinc oxide layer.