公开(公告)号：US20160155618A1

公开(公告)日：2016-06-02

申请号：US14416150

申请日：2014-12-08

Applicant: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Tao Zhou

IPC: H01J37/34

CPC classification number: H01J37/3423 ,  H01J37/3405 ,  H01J37/3408 ,  H01J37/3426 ,  H01J37/3452 ,  H01J37/3476 ,  H01J37/3491

Abstract: A vacuum ion sputtering target device is disclosed, which has an accommodating space provided with a substrate, a magnetron, a target, and a back plate disposed therein. The target is disposed above the back plate, the magnetron is provided below the back plate, the substrate is disposed above the target; wherein a shape of the target depends on a distribution of a magnetic field strength. Target utilization is quiet high, and there is basically no target remaining, so costs will be reduced.

Abstract translation: 公开了一种真空离子溅射靶装置，其具有设置有基板，磁控管，靶和背板的容纳空间。 靶设置在背板的上方，磁控管设置在背板的下方，基板设置在目标上方; 其中所述目标的形状取决于磁场强度的分布。 目标利用率居高不下，基本没有目标，所以成本会降低。