公开(公告)号：US12112930B2

公开(公告)日：2024-10-08

申请号：US16528781

申请日：2019-08-01

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Jung-Tang Wu ,  Szu-Hua Wu ,  Chin-Szu Lee ,  Yi-Lin Wang

IPC: H01J37/34 ,  C23C14/16 ,  C23C14/34 ,  H01J37/32 ,  H01L21/285 ,  H10N50/01

CPC classification number: H01J37/3476 ,  C23C14/165 ,  C23C14/34 ,  C23C14/3457 ,  H01J37/3244 ,  H01J37/3426 ,  H01L21/2855 ,  H10N50/01 ,  H01J2237/327

Abstract: A method includes placing a wafer on a wafer holder, depositing a film on a front surface of the wafer, and blowing a gas through ports in a redistributor onto a back surface of the wafer at a same time the deposition is performed. The gas is selected from a group consisting of nitrogen (N2), He, Ne, and combinations thereof.

公开(公告)号：US20240213007A1

公开(公告)日：2024-06-27

申请号：US18089216

申请日：2022-12-27

Applicant: Applied Materials, Inc.

Inventor： Junjie PAN ,  Yida LIN ,  Xiangjin XIE ,  Martin Lee RIKER ,  Suhas UMESH ,  Keith A. MILLER

IPC: H01J37/34 ,  C23C14/35 ,  C23C14/54

CPC classification number: H01J37/3464 ,  C23C14/35 ,  C23C14/54 ,  H01J37/3405 ,  H01J37/3476 ,  H01J2237/332

Abstract: Methods and apparatus for controlling processing of a substrate within a process chamber, comprising: performing statistical analysis on measurements of deposition profile of at least one previously processed substrate processed in the process chamber, wherein the deposition profile is based at least on modulating a power parameter of at least one power supply affecting a magnetron in the process chamber; determining, based on the statistical analysis, a model of the deposition profile as a function of at least the power parameter; fitting the measurements of deposition profile to the model; determining a power parameter setpoint for the at least one power supply using the fitted model based on a desired deposition profile of an unprocessed substrate; and setting the power parameter setpoint for processing the unprocessed substrate.

公开(公告)号：US11891686B2

公开(公告)日：2024-02-06

申请号：US16485862

申请日：2018-02-13

Applicant: UNIVERSITY OF THE WEST OF SCOTLAND

Inventor： Shigeng Song ,  Desmond Gibson ,  David Hutson

IPC: C23C14/35 ,  C03C17/34 ,  C23C14/04 ,  G02B5/28 ,  H01J37/34 ,  C23C14/54

CPC classification number: C23C14/35 ,  C03C17/3417 ,  C23C14/044 ,  C23C14/54 ,  C23C14/542 ,  C23C14/545 ,  C23C14/546 ,  G02B5/285 ,  H01J37/347 ,  H01J37/3408 ,  H01J37/3476 ,  C03C2218/156 ,  C03C2218/322 ,  C03C2218/34

Abstract: Apparatus for depositing one or more variable interference filters onto one or more substrates comprises a vacuum chamber, at least one magnetron sputtering device and at least one movable mount for supporting the one or more substrates within the vacuum chamber. The at least one magnetron sputtering device is configured to sputter material from a sputtering target towards in the mount, thereby defining a sputtering zone within the vacuum chamber. At least one static sputtering mask is located between the sputtering target and the mount. The at least one static sputtering mask is configured such that, when each substrate is moved through the sputtering zone on the at least one movable mount, a layer of material having a non-uniform thickness is deposited on each said substrate.

公开(公告)号：US11710624B2

公开(公告)日：2023-07-25

申请号：US17075484

申请日：2020-10-20

Applicant: BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.

Inventor： Bingliang Guo ,  Huaichao Ma ,  Andong Sun ,  Henan Zhang ,  Boyu Dong ,  Lu Zhang ,  Yujing Chen

IPC: H01J37/34 ,  H01L21/02 ,  C23C14/54 ,  C23C14/06 ,  C23C14/34

CPC classification number: H01J37/3464 ,  C23C14/3492 ,  C23C14/54 ,  C23C14/541 ,  C23C14/542 ,  H01J37/3447 ,  H01J37/3476 ,  H01J37/3485 ,  H01J37/3488 ,  H01L21/02266 ,  C23C14/0617

Abstract: A sputtering method includes one or more sputtering processes. Each sputtering process includes in a first pre-sputtering phase, sputtering a target material on a baffle plate configured to shield a substrate; in a second pre-sputtering phase, sputtering a target material compound on the baffle plate; and in a main sputtering phase, sputtering the target material compound on the substrate. The first pre-sputtering phase is used to adjust a sputtering voltage for the main sputtering phase.

公开(公告)号：US11705315B2

公开(公告)日：2023-07-18

申请号：US17523783

申请日：2021-11-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shota Ishibashi ,  Hiroyuki Toshima

IPC: H01J37/34 ,  C23C14/54 ,  C23C14/35

CPC classification number: H01J37/3476 ,  C23C14/35 ,  C23C14/54 ,  H01J37/3497

Abstract: A sputtering apparatus is provided. The sputtering apparatus comprises a vacuum chamber in which a substrate is located; a target having one surface facing an inner surface of the vacuum chamber; a gas supplier configured to supply a gas for generating plasma in the vacuum chamber; a power supplier configured to supply a power to the target to generate the plasma, sputter the target, and form a film on the substrate; and an abnormality detector configured to detect abnormality caused by a temperature of the target.

公开(公告)号：US11692263B2

公开(公告)日：2023-07-04

申请号：US16619840

申请日：2018-09-28

Applicant: VIAVI Solutions Inc.

Inventor： Zhao Yuan ,  Markus K. Tilsch ,  Georg J. Ockenfuss ,  Marius Grigonis ,  Andrew Clark ,  Donggong Peng ,  Yinxiang Xia ,  Eric Nybank ,  Neil Pinkerton

IPC: H01J37/34 ,  C23C14/54 ,  C23C14/35 ,  C23C14/00 ,  C23C14/52

CPC classification number: C23C14/547 ,  C23C14/0042 ,  C23C14/35 ,  C23C14/52 ,  C23C14/54 ,  H01J37/3464 ,  H01J37/3476

Abstract: A device may include one or more memories and one or more processors, communicatively coupled to the one or more memories, to receive design information, wherein the design information identifies desired values for a set of layers of an optical element to be generated during one or more runs; receive or obtain historic information identifying a relationship between a parameter for the one or more runs and an observed value relating to the one or more runs or the optical element; determine layer information for the one or more runs based on the historic information, wherein the layer information identifies run parameters, for the set of layers, to achieve the desired values; and cause the one or more runs to be performed based on the layer information.

公开(公告)号：US20180254172A1

公开(公告)日：2018-09-06

申请号：US15971479

申请日：2018-05-04

Applicant: CANON ANELVA CORPORATION

Inventor： Koji TSUNEKAWA ,  Masahiro SUENAGA ,  Takeo KONNO

IPC: H01J37/34 ,  C23C14/50 ,  C23C14/54 ,  C23C14/34 ,  H01J37/32 ,  G11B5/39

CPC classification number: H01J37/3476 ,  C23C14/3464 ,  C23C14/505 ,  C23C14/54 ,  C23C14/542 ,  G11B5/3906 ,  G11B5/3909 ,  H01J37/32733 ,  H01J37/34 ,  H01J37/3429 ,  H01J37/3435 ,  H01J37/3473 ,  H01J2237/20214 ,  H01J2237/24578 ,  H01J2237/332

Abstract: A sputtering apparatus according to one embodiment of the present invention includes a substrate holder, a cathode unit arranged at a position diagonally opposite to the substrate holder, a position sensor for detecting a rotational position of the substrate, and a holder rotation controller for adjusting a rotation speed of the substrate according to the detected rotational position. The holder rotation controller controls the rotation speed so that the rotation speed of the substrate when the cathode unit is located on a side in a first direction as an extending direction of a process target surface of the relief structure is lower than the rotation speed of the substrate when the cathode unit is located on a side in a second direction which is perpendicular to the first direction along the rotation of the substrate.

公开(公告)号：US20180174808A1

公开(公告)日：2018-06-21

申请号：US15834036

申请日：2017-12-06

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： DAISUKE SUETSUGU ,  MASAAKI TANABE ,  AKIRA OKUDA ,  YOSIMASA TAKII

IPC: H01J37/34 ,  C23C14/34 ,  C23C14/54 ,  C23C14/35 ,  C23C14/06 ,  H01J37/32 ,  C23C14/50

CPC classification number: H01J37/3476 ,  C23C14/0652 ,  C23C14/3485 ,  C23C14/35 ,  C23C14/50 ,  C23C14/54 ,  H01J37/32715 ,  H01J37/3402 ,  H01J37/3467 ,  H01L21/0217 ,  H01L21/02266

Abstract: A sputtering apparatus has a vacuum chamber capable of arranging a target material and a substrate therein so as to face each other, a DC power supply capable of electrically being connected to the target material, and a pulsing unit pulsing electric current flowing in the target material from the DC power supply, in which plasma is generated in the vacuum chamber to form a thin film on the substrate, including an ammeter measuring electric current flowing in the pulsing unit from the DC power supply, a power supply controller performing feedback control of the DC power supply so that a current value measured by the ammeter becomes a prescribed value and a pulse controller indicating a pulse cycle shifted from a control cycle of the DC power supply by the power supply controller to the pulsing unit.

公开(公告)号：US09928998B2

公开(公告)日：2018-03-27

申请号：US15045639

申请日：2016-02-17

Applicant: CANON ANELVA CORPORATION

Inventor： Yohsuke Shibuya

IPC: C23C14/34 ,  H01J37/34 ,  C23C14/56 ,  C23C14/35 ,  B08B7/00

CPC classification number: H01J37/3476 ,  B08B7/00 ,  C23C14/3407 ,  C23C14/3414 ,  C23C14/35 ,  C23C14/564 ,  H01J37/3405 ,  H01J37/3455 ,  H01J37/3461 ,  H01J37/3482 ,  H01J37/3485

Abstract: The present invention provides a means capable of determining the surface state of the target to execute accurate and quick cleaning of necessary part. The means includes: a magnet unit capable of forming a magnetic field on the surface of a target; a rotary system capable of driving the magnet unit to change the magnetic field pattern; and an ammeter configured to measure target current when the magnetic field is formed by the magnet unit and discharge voltage is applied to a target electrode to which the target is attached. The position of the magnet unit is variously changed by the rotary system, and the target current is measured at each position and compared with a reference value. It is then determined whether cleaning is necessary at each position, so that cleaning can be performed only for necessary part.

公开(公告)号：US20170342547A1

公开(公告)日：2017-11-30

申请号：US15395274

申请日：2016-12-30

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Seungho CHOI ,  Haeyoung YOO ,  Kanghee LEE

IPC: C23C14/35 ,  H01F7/02 ,  H01J37/32 ,  H01F7/20 ,  H01J37/34 ,  C23C14/34

CPC classification number: C23C14/352 ,  H01F7/0273 ,  H01F7/20 ,  H01J37/32715 ,  H01J37/3405 ,  H01J37/3414 ,  H01J37/3438 ,  H01J37/3452 ,  H01J37/3464 ,  H01J37/3476

Abstract: A sputtering apparatus includes a substrate holder, a first counterpart target area, a second counterpart target area, and a power supply. The first counterpart target area includes a first target and at least one first magnetic part and operates to form a magnetic field in a first plasma area adjacent to the first target. The second counterpart target area includes a second target and at least one second magnetic part and operates to form a magnetic field in a second plasma area adjacent to the second target. The power supply supplies a first power voltage to the first and second targets. A control anode faces the substrate holder in a second direction, with the first and second plasma areas therebetween, and receives a control voltage greater than the first power voltage.