公开(公告)号：US20120024314A1

公开(公告)日：2012-02-02

申请号：US12844193

申请日：2010-07-27

申请人： SHIJIAN LUO ,  ORLANDO ESCORCIA ,  CARLO WALDFRIED

发明人： SHIJIAN LUO ,  ORLANDO ESCORCIA ,  CARLO WALDFRIED

IPC分类号： B08B7/00

CPC分类号： G03F7/427 ,  H01J2237/3342

摘要： Plasma mediated ashing processes for removing organic material from a substrate generally includes exposing the substrate to the plasma to selectively remove photoresist, implanted photoresist, polymers and/or residues from the substrate, wherein the plasma contains a ratio of active nitrogen and active oxygen that is larger than a ratio of active nitrogen and active oxygen obtainable from plasmas of gas mixtures comprising oxygen gas and nitrogen gas. The plasma exhibits high throughput while minimizing and/or preventing substrate oxidation and dopant bleaching. Plasma apparatuses are also described.

摘要翻译： 用于从衬底去除有机材料的等离子体介质灰化过程通常包括将衬底暴露于等离子体以选择性地从衬底去除光致抗蚀剂，植入的光刻胶，聚合物和/或残余物，其中等离子体包含活性氮和活性氧的比例， 大于可由包含氧气和氮气的气体混合物的等离子体获得的活性氮和活性氧的比例。 等离子体显示出高通量，同时最小化和/或防止底物氧化和掺杂剂漂白。 还描述了等离子体装置。