公开(公告)号：US20120024314A1

公开(公告)日：2012-02-02

申请号：US12844193

申请日：2010-07-27

Applicant: SHIJIAN LUO ,  ORLANDO ESCORCIA ,  CARLO WALDFRIED

Inventor： SHIJIAN LUO ,  ORLANDO ESCORCIA ,  CARLO WALDFRIED

IPC: B08B7/00

CPC classification number: G03F7/427 ,  H01J2237/3342

Abstract: Plasma mediated ashing processes for removing organic material from a substrate generally includes exposing the substrate to the plasma to selectively remove photoresist, implanted photoresist, polymers and/or residues from the substrate, wherein the plasma contains a ratio of active nitrogen and active oxygen that is larger than a ratio of active nitrogen and active oxygen obtainable from plasmas of gas mixtures comprising oxygen gas and nitrogen gas. The plasma exhibits high throughput while minimizing and/or preventing substrate oxidation and dopant bleaching. Plasma apparatuses are also described.

Abstract translation: 用于从衬底去除有机材料的等离子体介质灰化过程通常包括将衬底暴露于等离子体以选择性地从衬底去除光致抗蚀剂，植入的光刻胶，聚合物和/或残余物，其中等离子体包含活性氮和活性氧的比例， 大于可由包含氧气和氮气的气体混合物的等离子体获得的活性氮和活性氧的比例。 等离子体显示出高通量，同时最小化和/或防止底物氧化和掺杂剂漂白。 还描述了等离子体装置。

公开(公告)号：US20090277871A1

公开(公告)日：2009-11-12

申请号：US12398390

申请日：2009-03-05

Applicant: Ivan Berry ,  Orlando Escorcia ,  Keping Han ,  Jianan Hou ,  Shijian Luo ,  Carlo Waldfried

Inventor： Ivan Berry ,  Orlando Escorcia ,  Keping Han ,  Jianan Hou ,  Shijian Luo ,  Carlo Waldfried

IPC: C23F1/00 ,  C23F1/08

CPC classification number: G03F7/38 ,  G03F7/427 ,  H01J37/32449 ,  H01L21/31138

Abstract: Processes for stripping high dose ion implanted photoresist while minimizing substrate loss. The processes generally include passivation of the substrate surface before and/or during a plasma mediated stripping process. By passivating the substrate surface before and/or during the plasma mediated stripping process, oxidation is substantially reduced during plasma stripping thereby leading to reduced substrate loss.

Abstract translation: 用于剥离高剂量离子注入的光致抗蚀剂同时尽量减少底物损失的方法。 这些方法通常包括在等离子体介质剥离过程之前和/或期间对衬底表面的钝化。 通过在等离子体介质剥离过程之前和/或期间钝化衬底表面，在等离子体剥离期间，氧化显着降低，从而导致衬底损耗降低。

公开(公告)号：US20070134935A1

公开(公告)日：2007-06-14

申请号：US11702465

申请日：2007-02-05

Applicant: Carlo Waldfried ,  Orlando Escorcia ,  Ivan Berry

Inventor： Carlo Waldfried ,  Orlando Escorcia ,  Ivan Berry

IPC: H01L21/469

CPC classification number: H01L21/76825 ,  C23C16/56 ,  H01L21/02107 ,  H01L21/02203 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/31051 ,  H01L21/31058 ,  H01L21/31695 ,  H01L21/76826

Abstract: Processes for sealing porous low k dielectric film generally comprises exposing the porous surface of the porous low k dielectric film to ultraviolet (UV) radiation at intensities, times, wavelengths and in an atmosphere effective to seal the porous dielectric surface by means of carbonization, oxidation, and/or film densification. The surface of the surface of the porous low k material is sealed to a depth less than or equal to about 20 nanometers, wherein the surface is substantially free of pores after the UV exposure.

Abstract translation: 用于密封多孔低k电介质膜的方法通常包括将多孔低k电介质膜的多孔表面暴露于强度，时间，波长和大气中的紫外（UV）辐射，其有效地通过碳化，氧化来密封多孔电介质表面 ，和/或膜致密化。 多孔低k材料的表面的表面被密封到小于或等于约20纳米的深度，其中在UV暴露后该表面基本上没有孔。

公开(公告)号：US06759098B2

公开(公告)日：2004-07-06

申请号：US09906276

申请日：2001-07-16

Applicant: Qingyuan Han ,  Carlo Waldfried ,  Orlando Escorcia ,  Ralph Albano ,  Ivan L. Berry, III ,  Jeff Jang ,  Ian Ball

Inventor： Qingyuan Han ,  Carlo Waldfried ,  Orlando Escorcia ,  Ralph Albano ,  Ivan L. Berry, III ,  Jeff Jang ,  Ian Ball

IPC: B05D302

CPC classification number: C01B33/126 ,  H01L21/02137 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/0234 ,  H01L21/31058 ,  H01L21/3122 ,  H01L21/31695

Abstract: Low dielectric constant film materials with improved elastic modulus. The method of making such film materials involves providing a porous methyl silsesquioxane based dielectric film material produced from a resin molecule containing at least 2 Si—CH3 groups and plasma curing the porous film material to convert the film into porous silica. Plasma curing of the porous film material yields a film with improved modulus and outgassing properties. The improvement in elastic modulus is typically greater than or about 100%, and more typically greater than or about 200%. The plasma cured porous film material can optionally be annealed. The annealing of the plasma cured film may reduce the dielectric constant of the film while maintaining an improved elastic modulus as compared to the plasma cured porous film material. The annealed, plasma cured film has a dielectric constant between about 1.1 and about 2.4 and an improved elastic modulus.

Abstract translation: 具有改善弹性模量的低介电常数薄膜材料。 制造这种膜材料的方法包括提供由含有至少2个Si-CH 3基团的树脂分子制备的多孔甲基倍半硅氧烷基介电膜材料和等离子体固化多孔膜材料以将膜转化为多孔二氧化硅。 多孔膜材料的等离子体固化产生具有改进的模量和除气性质的膜。 弹性模量的改善通常大于或约100％，更典型地大于或约200％。 等离子体固化的多孔膜材料可以任选地退火。 与等离子体固化的多孔膜材料相比，等离子体固化膜的退火可以降低膜的介电常数，同时保持改善的弹性模量。 退火的等离子体固化膜的介电常数介于约1.1和约2.4之间，弹性模量提高。

公开(公告)号：US20250129485A1

公开(公告)日：2025-04-24

申请号：US18754148

申请日：2024-06-26

Applicant: Bryan C. Hendrix ,  David Peters ,  Weimin Li ,  Carlo Waldfried ,  Richard A. Cooke ,  Nilesh Gunda ,  I-Kuan Lin

Inventor： Bryan C. Hendrix ,  David Peters ,  Weimin Li ,  Carlo Waldfried ,  Richard A. Cooke ,  Nilesh Gunda ,  I-Kuan Lin

IPC: C23C28/04 ,  B01D39/20 ,  B01D67/00 ,  C23C14/24 ,  C23C14/50 ,  C23C16/04 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/56

Abstract: Coatings applicable to a variety of substrate articles, structures, materials, and equipment are described. In various applications, the substrate includes metal surface susceptible to formation of oxide, nitride, fluoride, or chloride of such metal thereon, wherein the metal surface is configured to be contacted in use with gas, solid, or liquid that is reactive therewith to form a reaction product that is deleterious to the substrate article, structure, material, or equipment. The metal surface is coated with a protective coating preventing reaction of the coated surface with the reactive gas, and/or otherwise improving the electrical, chemical, thermal, or structural properties of the substrate article or equipment. Various methods of coating the metal surface are described, and for selecting the coating material that is utilized.

公开(公告)号：US08580076B2

公开(公告)日：2013-11-12

申请号：US10249962

申请日：2003-05-22

Applicant: Alan Frederick Becknell ,  Thomas James Buckley ,  David Ferris ,  Richard E. Pingree, Jr. ,  Palanikumaran Sakthivel ,  Aseem Kumar Srivastava ,  Carlo Waldfried

Inventor： Alan Frederick Becknell ,  Thomas James Buckley ,  David Ferris ,  Richard E. Pingree, Jr. ,  Palanikumaran Sakthivel ,  Aseem Kumar Srivastava ,  Carlo Waldfried

IPC: H01L21/3065 ,  C23C16/00 ,  C23C16/4412 ,  C23C16/455 ,  C23C16/45561 ,  C23C16/45563 ,  C23C16/46 ,  C23C16/505 ,  C23C16/511

CPC classification number: H01J37/32357 ,  H01J37/3244 ,  H01J37/32844 ,  Y02C20/30

Abstract: A plasma apparatus, various components of the plasma apparatus, and an oxygen free and nitrogen free processes for effectively removing photoresist material and post etch residues from a substrate with a carbon and/or hydrogen containing low k dielectric layer(s).

Abstract translation: 等离子体装置，等离子体装置的各种部件，以及无氧和无氮的方法，用于有效地去除光致抗蚀剂材料，并且用含有低k电介质层的碳和/或氢的底物后蚀刻残留物。

公开(公告)号：US20100130017A1

公开(公告)日：2010-05-27

申请号：US12275394

申请日：2008-11-21

Applicant: Shijian Luo ,  Orlando Escorcia ,  Carlo Waldfried ,  Ivan Berry

Inventor： Shijian Luo ,  Orlando Escorcia ,  Carlo Waldfried ,  Ivan Berry

IPC: H01L21/3065

CPC classification number: H01L21/31138 ,  H01J37/3244 ,  H01J37/32449

Abstract: Front end of line (FEOL) plasma mediated ashing processes for removing organic material from a substrate generally includes exposing the substrate to the plasma to selectively remove photoresist, implanted photoresist, polymers and/or residues from the substrate, wherein the plasma contains a ratio of active nitrogen and active oxygen that is larger than a ratio of active nitrogen and active oxygen obtainable from plasmas of gas mixtures comprising oxygen gas and nitrogen gas. The plasma exhibits high throughput while minimizing and/or preventing substrate oxidation and dopant bleaching. Plasma apparatuses are also described.

Abstract translation: 用于从衬底去除有机材料的等离子体介质灰化过程的前端（FEOL）通常包括将衬底暴露于等离子体以选择性地从衬底去除光致抗蚀剂，植入的光致抗蚀剂，聚合物和/或残余物，其中等离子体包含 活性氮和活性氧，其大于可由包含氧气和氮气的气体混合物的等离子体获得的活性氮和活性氧的比例。 等离子体显示出高通量，同时最小化和/或防止底物氧化和掺杂剂漂白。 还描述了等离子体装置。

公开(公告)号：US07704872B2

公开(公告)日：2010-04-27

申请号：US11702465

申请日：2007-02-05

Applicant: Carlo Waldfried ,  Orlando Escorcia ,  Ivan Berry

Inventor： Carlo Waldfried ,  Orlando Escorcia ,  Ivan Berry

IPC: H01L21/4763

CPC classification number: H01L21/76825 ,  C23C16/56 ,  H01L21/02107 ,  H01L21/02203 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/31051 ,  H01L21/31058 ,  H01L21/31695 ,  H01L21/76826

Abstract: Processes for sealing porous low k dielectric film generally comprises exposing the porous surface of the porous low k dielectric film to ultraviolet (UV) radiation at intensities, times, wavelengths and in an atmosphere effective to seal the porous dielectric surface by means of carbonization, oxidation, and/or film densification. The surface of the surface of the porous low k material is sealed to a depth less than or equal to about 20 nanometers, wherein the surface is substantially free of pores after the UV exposure.

公开(公告)号：US20110226280A1

公开(公告)日：2011-09-22

申请号：US13117488

申请日：2011-05-27

Applicant: Ivan L. Berry ,  Carlo Waldfried ,  Shijian Luo ,  Orlando Escorcia

Inventor： Ivan L. Berry ,  Carlo Waldfried ,  Shijian Luo ,  Orlando Escorcia

IPC: B08B7/00 ,  B08B13/00 ,  C23F1/08

CPC classification number: H01L21/02101 ,  G03F7/427 ,  H01L21/31138

Abstract: A plasma ashing process for removing photoresist, polymers and/or residues from a substrate comprises placing the substrate including the photoresist, polymers, and/or residues into a reaction chamber; generating a plasma from a gas mixture comprising oxygen gas (O2) and/or an oxygen containing gas; suppressing and/or reducing fast diffusing species in the plasma; and exposing the substrate to the plasma to selectively remove the photoresist, polymers, and/or residues from the substrate, wherein the plasma is substantially free from fast diffusing species.

Abstract translation: 用于从基板去除光致抗蚀剂，聚合物和/或残留物的等离子体灰化处理包括将包括光致抗蚀剂，聚合物和/或残余物的基材放置在反应室中; 从包含氧气（O 2）和/或含氧气体的气体混合物产生等离子体; 抑制和/或减少等离子体中的快速扩散物质; 以及将所述衬底暴露于所述等离子体以选择性地从所述衬底去除所述光致抗蚀剂，聚合物和/或残留物，其中所述等离子体基本上不含快速扩散物质。

公开(公告)号：US20060105566A1

公开(公告)日：2006-05-18

申请号：US10987276

申请日：2004-11-12

Applicant: Carlo Waldfried ,  Orlando Escorcia ,  Ivan Berry

Inventor： Carlo Waldfried ,  Orlando Escorcia ,  Ivan Berry

IPC: H01L21/4763

CPC classification number: H01L21/76825 ,  C23C16/56 ,  H01L21/02107 ,  H01L21/02203 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/31051 ,  H01L21/31058 ,  H01L21/31695 ,  H01L21/76826

Abstract: Processes for sealing porous low k dielectric film generally comprises exposing the porous surface of the porous low k dielectric film to ultraviolet (UV) radiation at intensities, times, wavelengths and in an atmosphere effective to seal the porous dielectric surface by means of carbonization, oxidation, and/or film densification. The surface of the surface of the porous low k material is sealed to a depth less than or equal to about 20 nanometers, wherein the surface is substantially free of pores after the UV exposure.

Abstract translation: 用于密封多孔低k电介质膜的方法通常包括将多孔低k电介质膜的多孔表面暴露于强度，时间，波长和大气中的紫外线（UV）辐射，有效地通过碳化，氧化来密封多孔电介质表面 ，和/或膜致密化。 多孔低k材料的表面的表面被密封到小于或等于约20纳米的深度，其中在UV暴露后该表面基本上没有孔。