公开(公告)号：US20040158109A1

公开(公告)日：2004-08-12

申请号：US10770438

申请日：2004-02-04

申请人： SHOWA DENKO K.K.

发明人： Hiromoto Ohno ,  Toshio Ohi

IPC分类号： C07C019/08

CPC分类号： C07C19/08 ,  C07C17/087 ,  C07C17/10 ,  C07C17/206 ,  C07C17/21 ,  C07C17/38 ,  C07C17/383

摘要： Octafluoropropane is produced by a process including a step (1) of reacting hexafluoropropene with hydrogen fluoride in a gas phase at a temperature of from 150 to 450null C. in the presence of a fluorination catalyst to obtain 2H-heptafluoropropane and a step (2) of reacting 2H-heptafluoropropane obtained in step (1) with fluorine gas in a gas phase at a temperature of from 250 to 500null C. in the absence of a catalyst to obtain octafluoropropane. High-purity octafluoropropane is obtained which can be used in a process for producing a semiconductor device.

摘要翻译： 通过在氟化催化剂的存在下，在150〜450℃的温度下，使六氟丙烯与氟化氢反应的工序（1）来制造八氟丙烷，得到2H-七氟丙烷和工序（2 ）在步骤（1）中获得的2H-七氟丙烷与氟气在气相中在250-500℃的温度下在不存在催化剂的情况下反应，得到八氟丙烷。 得到高纯度八氟丙烷，可用于制造半导体器件的方法。

公开(公告)号：US20040162450A1

公开(公告)日：2004-08-19

申请号：US10778239

申请日：2004-02-17

申请人： SHOWA DENKO K.K.

发明人： Hiromoto Ohno ,  Toshio Ohi

IPC分类号： C07C019/08

CPC分类号： C23G5/02803 ,  C07C17/10 ,  C07C17/21 ,  H01L21/31116 ,  H01L21/32136 ,  C07C19/08

摘要： The process for producing perfluorocarbons according to the present invention is characterized in that in the production of a perfluorocarbon by contacting an organic compound with a fluorine gas, the organic compound is contacted with the fluorine gas at a temperature of from 200 to 500null C. and the content of an oxygen gas within the reaction system is controlled to 2% by volume or less based on the gas components in the reaction starting material, whereby a perfluorocarbon reduced in the content of impurities is produced. According to the process for producing perfluorocarbons of the present invention, high-purity perfluorocarbons extremely suppressed in the production of impurities such as an oxygen-containing compound can be obtained. The perfluorocarbons obtained by the production process of the present invention contain substantially no oxygen-containing compound and, therefore, can be effectively used as an etching or cleaning gas for use in a process for producing a semiconductor device.

摘要翻译： 根据本发明的全氟化碳的制造方法的特征在于，通过使有机化合物与氟气接触来制造全氟化碳，有机化合物与氟气在200〜500℃的温度下接触。 并且反应体系内的氧气的含量基于反应原料中的气体成分控制在2体积％以下，由此产生降低杂质含量的全氟化碳。 根据本发明的全氟化碳的制造方法，可以得到在含氧化合物等杂质的制造中极度抑制的高纯度全氟化碳。 通过本发明的制造方法获得的全氟化碳基本上不含有含氧化合物，因此可以有效地用作用于制造半导体器件的工艺的蚀刻或清洁气体。