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公开(公告)号：US20230039660A1
公开(公告)日：2023-02-09
申请号：US17879118
申请日：2022-08-02
Applicant: SHOWA DENKO K.K.
Inventor： Kensho TANAKA , Yoshikazu Umeta
Abstract: A SiC epitaxial wafer includes a SiC substrate and an epitaxial layer laminated on the SiC substrate, wherein the epitaxial layer contains an impurity element which determines the conductivity type of the epitaxial layer and boron which has a conductivity type different from the conductivity type of the impurity element, and the concentration of boron in the center of the epitaxial layer is less than 5.0×1012 cm−3.
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