公开(公告)号：US11692266B2

公开(公告)日：2023-07-04

申请号：US16717326

申请日：2019-12-17

Applicant: SHOWA DENKO K.K.

Inventor： Yoshikazu Umeta ,  Yoshishige Okuno ,  Rimpei Kindaichi

IPC: C23C16/455 ,  C30B25/14 ,  C30B25/12 ,  H01L21/02 ,  C23C16/32 ,  C23C16/46 ,  C30B29/36 ,  H01L21/205

CPC classification number: C23C16/455 ,  C23C16/325 ,  C23C16/46 ,  C30B25/12 ,  C30B25/14 ,  C30B29/36 ,  H01L21/02529 ,  H01L21/205

Abstract: Provided is a SiC chemical vapor deposition apparatus including: a furnace body inside of which a growth space is formed; and a placement table which is positioned in the growth space and has a placement surface on which a SiC wafer is placed, in which the furnace body comprises a first hole which is positioned on an upper portion which faces the placement surface and through which a raw material gas is introduced into the growth space, a second hole which is positioned on a side wall of the furnace body and through which a purge gas flows into the growth space, a third hole which is positioned on the side wall of the furnace body at a lower position than the second hole and discharges the gases in the growth space, and a protrusion which is protrudes towards the growth space from a lower end of the second hole to adjust a flow of the raw material gas.

公开(公告)号：US20230039660A1

公开(公告)日：2023-02-09

申请号：US17879118

申请日：2022-08-02

Applicant: SHOWA DENKO K.K.

Inventor： Kensho TANAKA ,  Yoshikazu Umeta

IPC: H01L29/16 ,  H01L21/02

Abstract: A SiC epitaxial wafer includes a SiC substrate and an epitaxial layer laminated on the SiC substrate, wherein the epitaxial layer contains an impurity element which determines the conductivity type of the epitaxial layer and boron which has a conductivity type different from the conductivity type of the impurity element, and the concentration of boron in the center of the epitaxial layer is less than 5.0×1012 cm−3.

公开(公告)号：US20210217648A1

公开(公告)日：2021-07-15

申请号：US17211634

申请日：2021-03-24

Applicant: SHOWA DENKO K.K.

Inventor： Jia Yu ,  Naoto Ishibashi ,  Keisuke Fukada ,  Yoshikazu Umeta ,  Hironori Atsumi

IPC: H01L21/687 ,  H01L21/02 ,  C23C16/458

Abstract: A susceptor which is used in a chemical vapor deposition apparatus for growing an epitaxial layer on a principal plane of a wafer by a chemical vapor deposition method, and which includes a base; and three protrusion parts that are disposed on an outer circumferential part of the base and support an outer circumferential part of the wafer, is provided.

公开(公告)号：US10801128B2

公开(公告)日：2020-10-13

申请号：US16196246

申请日：2018-11-20

Applicant: SHOWA DENKO K.K.

Inventor： Yasunori Motoyama ,  Yoshishige Okuno ,  Yoshikazu Umeta ,  Keisuke Fukada

IPC: C23C16/46 ,  C30B25/10 ,  C30B29/36 ,  C30B25/12

Abstract: A SiC epitaxial growth apparatus includes: a susceptor having a mounting surface on which a wafer is placable; a heater which is provided apart from the susceptor on a side opposite to the mounting surface of the susceptor; and an annular radiation member which is in contact with a back surface of the susceptor opposite to the mounting surface and is located at a position which is overlapped with an outer peripheral portion of the wafer placed on the susceptor in a plan view, in which the radiation member has a higher emissivity than that of the susceptor and has an exposed portion as viewed from the heater.

公开(公告)号：US20200173053A1

公开(公告)日：2020-06-04

申请号：US16699355

申请日：2019-11-29

Applicant: SHOWA DENKO K.K.

Inventor： Yoshikazu Umeta ,  Hironori Atsumi

IPC: C30B25/14 ,  C30B29/36

Abstract: A SiC epitaxial growth apparatus according to an embodiment includes a mounting stand on which a SiC wafer is mounted, and a furnace body which is configured to cover the mounting stand, and the furnace body includes a raw material gas supply port which is positioned so as to face the mounting stand and is configured to supply a raw material gas to the growth space, a first purge gas supply port which surrounds a vicinity of the raw material gas supply port and is configured to supply a purge gas to the growth space, and a second purge gas supply port which surrounds a vicinity of the first purge gas supply port and is configured to supply a purge gas to the growth space.

公开(公告)号：US11326275B2

公开(公告)日：2022-05-10

申请号：US16699355

申请日：2019-11-29

Applicant: SHOWA DENKO K.K.

Inventor： Yoshikazu Umeta ,  Hironori Atsumi

IPC: C30B35/00 ,  C30B25/14 ,  C30B29/36

Abstract: A SiC epitaxial growth apparatus according to an embodiment includes a mounting stand on which a SiC wafer is mounted, and a furnace body which is configured to cover the mounting stand, and the furnace body includes a raw material gas supply port which is positioned so as to face the mounting stand and is configured to supply a raw material gas to the growth space, a first purge gas supply port which surrounds a vicinity of the raw material gas supply port and is configured to supply a purge gas to the growth space, and a second purge gas supply port which surrounds a vicinity of the first purge gas supply port and is configured to supply a purge gas to the growth space.