Abstract:
An object of the invention is to prove a method of producing an electron-emitting device, in which metal content in an electron emission film can be relatively easily controlled and adhesiveness between electrodes and the like in contact with the electron emission film and the electron emission film is good. The method is a method of producing an electron-emitting device including a cathode electrode and a metal-containing electron emission film located above the cathode electrode. The method includes a first step (A) of preparing an electroconductive first layer for the cathode, a second layer for the electron emission film located above the first layer, and a third layer for a metal-containing electron beam focusing electrode in contact with the second layer and a second step (B) of diffusing the metal from the third layer into the second layer.
Abstract:
There are provided a stable electron-emitting device with less fluctuation in electron-emitting properties and a method of fabricating the electron-emitting device. The electron-emitting device has a substrate; a plurality of columnar first regions respectively orientated substantially perpendicular to the surface of the substrate; a second region provided between the respective first regions higher than the first regions in resistance; and an electron emission layer covering the columnar first regions and the second region.