公开(公告)号：US20140151820A1

公开(公告)日：2014-06-05

申请号：US13690112

申请日：2012-11-30

Applicant: SILICON LABORATORIES INC.

Inventor： Roger T. Howe ,  Emmanuel P. Quevy ,  Zhen Gu

IPC: H01L23/31 ,  H01L21/56

CPC classification number: H01L23/3171 ,  B81B7/0038 ,  H01L2924/0002 ,  H01L2924/1461 ,  H01L2924/00

Abstract: A technique for forming an encapsulated microelectromechanical system (MEMS) device includes forming an integrated circuit using a substrate, forming a barrier using the substrate, and forming a MEMS device using the substrate. The method includes encapsulating the MEMS device in a cavity. The barrier is disposed between the integrated circuit and the cavity and inhibits the integrated circuit from outgassing into the cavity. The barrier may be substantially impermeable to gas migration from the integrated circuit.

Abstract translation: 用于形成封装的微机电系统（MEMS）器件的技术包括使用衬底形成集成电路，使用衬底形成阻挡层，以及使用衬底形成MEMS器件。 该方法包括将MEMS器件封装在空腔中。 屏障设置在集成电路和空腔之间，并且阻止集成电路脱气进入空腔。 阻挡层可能基本上不可渗透从集成电路的气体迁移。

公开(公告)号：US09018715B2

公开(公告)日：2015-04-28

申请号：US13690112

申请日：2012-11-30

Applicant: Silicon Laboratories Inc.

Inventor： Roger T. Howe ,  Emmanuel P. Quevy ,  Zhen Gu

IPC: H01L23/31 ,  B81B7/00

CPC classification number: H01L23/3171 ,  B81B7/0038 ,  H01L2924/0002 ,  H01L2924/1461 ,  H01L2924/00

Abstract: A technique for forming an encapsulated microelectromechanical system (MEMS) device includes forming an integrated circuit using a substrate, forming a barrier using the substrate, and forming a MEMS device using the substrate. The method includes encapsulating the MEMS device in a cavity. The barrier is disposed between the integrated circuit and the cavity and inhibits the integrated circuit from outgassing into the cavity. The barrier may be substantially impermeable to gas migration from the integrated circuit.

Abstract translation: 用于形成封装的微机电系统（MEMS）器件的技术包括使用衬底形成集成电路，使用衬底形成阻挡层，以及使用衬底形成MEMS器件。 该方法包括将MEMS器件封装在空腔中。 屏障设置在集成电路和空腔之间，并且阻止集成电路脱气进入空腔。 阻挡层可能基本上不可渗透从集成电路的气体迁移。