公开(公告)号：US20230031860A1

公开(公告)日：2023-02-02

申请号：US17851691

申请日：2022-06-28

Applicant: SINTOKOGIO, LTD.

Inventor： Yoshikane TANAAMI ,  Miyuki HAYASHI ,  Akimasa NAKAO

IPC: G01L1/22 ,  H01L21/027

Abstract: A method for producing a force sensor is a method for producing a force sensor that includes a plate-shaped member (base material) and a strain gauge made of a conductor film, the method including: a first step (see (c)) of forming a conductor layer on one of main surfaces of the plate-shaped member (base material) via a dielectric layer; and a second step (see (d)) of processing the conductor film into the strain gauges by a semiconductor transfer production method.