INTERNAL VOLTAGE GENERATION CIRCUITS
    1.
    发明申请
    INTERNAL VOLTAGE GENERATION CIRCUITS 有权
    内部电压发生电路

    公开(公告)号:US20150035590A1

    公开(公告)日:2015-02-05

    申请号:US14155544

    申请日:2014-01-15

    Applicant: SK hynix Inc.

    Inventor: Jong Ho SON

    CPC classification number: G05F1/46 G05F1/565

    Abstract: An internal voltage generation circuit including a drive control signal generator and an internal voltage driver. The drive control signal generator generates a drive control signal in response to an active pulse signal and a drive signal. The internal voltage driver, electrically coupled to the drive control signal generator, divides a level of an internal voltage signal in response to the drive control signal to generate a division voltage signal, compares a level of the division voltage signal with a level of a reference voltage signal to generate the drive signal, and drives the internal voltage signal in response to the drive signal.

    Abstract translation: 内部电压产生电路,包括驱动控制信号发生器和内部电压驱动器。 驱动控制信号发生器响应于有效脉冲信号和驱动信号产生驱动控制信号。 电耦合到驱动控制信号发生器的内部电压驱动器响应于驱动控制信号分配内部电压信号的电平以产生分压电压信号,将分压电压信号的电平与参考电平 电压信号以产生驱动信号,并响应于驱动信号驱动内部电压信号。

    POWER CONTROL DEVICE AND SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME

    公开(公告)号:US20180122436A1

    公开(公告)日:2018-05-03

    申请号:US15493508

    申请日:2017-04-21

    Applicant: SK hynix Inc.

    CPC classification number: G11C7/12 G11C5/147 G11C5/148 G11C7/065

    Abstract: A power control device and a semiconductor memory device including the same may be provided. The power control device, may include an amplifier configured to amplify an input signal having a second power-supply voltage level to a first power-supply voltage level having a voltage level different from the second power-supply voltage level. The power control device may include an output portion configured to set an output signal of the amplifier to a specific logic level upon receiving a control signal, and output the output signal having the specific logic level.

    SENSE AMPLIFIER DRIVING DEVICE
    3.
    发明申请
    SENSE AMPLIFIER DRIVING DEVICE 有权
    感应放大器驱动装置

    公开(公告)号:US20160372176A1

    公开(公告)日:2016-12-22

    申请号:US15253389

    申请日:2016-08-31

    Applicant: SK hynix Inc.

    Abstract: A sense amplifier driving device, and more particularly, a technology for improving the post overdriving operation characteristic of a semiconductor device. A sense amplifier driving device includes a driving signal generation block configured to compare a reference voltage set by a voltage trimming signal and a level of a power supply voltage, and generate a pull-up driving signal for controlling an operation of a sense amplifier; and a sense amplifier driving block configured to supply a driving voltage to a pull-up power line of the sense amplifier for an active operation period in correspondence to the pull-up driving signal, the driving signal generation block including a voltage divider configured to divide the power supply voltage, and output a divided voltage; and a voltage comparison section configured to compare the reference voltage and the divided voltage, and output a control signal for controlling an overdriving operation of the sense amplifier.

    Abstract translation: 一种读出放大器驱动装置,更具体地说,涉及一种改善半导体器件的过驱动特性的技术。 读出放大器驱动装置包括:驱动信号生成块,被配置为将通过调整电压设置的参考电压与电源电压的电平进行比较,并产生用于控制读出放大器的操作的上拉驱动信号; 以及读出放大器驱动块,其被配置为对应于所述上拉驱动信号,为所述读出放大器的上拉电源线提供驱动电压,用于与所述上拉驱动信号相对应的有效工作周期,所述驱动信号产生模块包括分压器, 电源电压,并输出分压; 以及电压比较部,被配置为比较所述参考电压和所述分压,并且输出用于控制所述读出放大器的过驱动的控制信号。

    SENSE AMPLIFIER DRIVING DEVICE AND SEMICONDUCTOR DEVICE INCLUDING THE SAME
    4.
    发明申请
    SENSE AMPLIFIER DRIVING DEVICE AND SEMICONDUCTOR DEVICE INCLUDING THE SAME 有权
    感测放大器驱动器件和包括其的半导体器件

    公开(公告)号:US20160284391A1

    公开(公告)日:2016-09-29

    申请号:US14818093

    申请日:2015-08-04

    Applicant: SK hynix Inc.

    CPC classification number: G11C11/4091 G11C11/4074 G11C11/4076 G11C11/4094

    Abstract: A sense amplifier driving device may include a sense amplifier driving block configured to supply a post overdriving voltage to a pull-up power line coupled to a sense amplifier, the post overdriving voltage supplied to the sense amplifier during a post overdriving operation period in correspondence to a pull-up driving signal. The sense amplifier driving device may include a driving signal generation block configured to compare a reference voltage, set by a voltage trimming signal, with a level of a power supply voltage, and generate the pull-up driving signal for controlling whether to perform a post overdriving operation.

    Abstract translation: 感测放大器驱动装置可以包括读出放大器驱动块,其构造成将后过驱动电压提供给耦合到读出放大器的上拉电源线,后过驱动电压在后驱动操作周期期间提供给读出放大器,对应于 上拉驱动信号。 读出放大器驱动装置可以包括:驱动信号生成块,被配置为将通过电压调整信号设置的参考电压与电源电压的电平进行比较,并且生成用于控制是否执行一个信号的上拉驱动信号 过驱动。

    SEMICONDUCTOR APPARATUS AND TEST CIRCUIT THEREOF
    5.
    发明申请
    SEMICONDUCTOR APPARATUS AND TEST CIRCUIT THEREOF 有权
    半导体器件及其测试电路

    公开(公告)号:US20140003161A1

    公开(公告)日:2014-01-02

    申请号:US13720319

    申请日:2012-12-19

    Applicant: SK HYNIX INC.

    Abstract: A test circuit of a semiconductor apparatus includes a test temperature information generation section, an erroneous operation prevention unit, and a refresh cycle adjustment unit. The test temperature information generation section outputs test temperature information having a plurality of bits in a test operation mode, and irregularly changes logic values of the plurality of bits and transition time points of the logic values. The erroneous operation prevention unit generates a temperature compensation signal in response to the test temperature information. The refresh cycle adjustment unit changes a cycle of a reference refresh signal in response to the temperature compensation signal, and generates a refresh signal.

    Abstract translation: 半导体装置的测试电路包括测试温度信息产生部分,错误操作防止单元和刷新周期调节单元。 测试温度信息生成部分在测试操作模式下输出具有多个位的测试温度信息,并且不规则地改变逻辑值的多个位的逻辑值和转换时间点。 错误操作防止单元根据测试温度信息生成温度补偿信号。 刷新周期调整单元响应于温度补偿信号改变参考刷新信号的周期,并产生刷新信号。

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