摘要:
A slave communication apparatus including a clock recovering section that recovers a clock signal from a transmission signal having a first signal value when the clock is a first level, a second signal value when the clock is a second level and data has a first data value, and a third signal value between the first and second signal values when the clock is the second level and the data has a second data value; and a data recovering section that recovers the data, wherein the data recovering section sets the data threshold value to be a first setting value between the second and third signal values in response to the recovered data having the second data value, and sets the data threshold value to be a second setting value between the first and third signal values in response to the recovered data having the first data value.
摘要:
An apparatus for measuring round-trip time of a test signal using a programmable logic device comprises a pattern generator generating a test signal and measuring a round-trip time of the test signal, a programmable logic device of which internal circuits are configured to transmit the test signal in a predetermined manner, and bidirectional buses connecting the pattern generator and the programmable logic device. The round-trip time of the test signal is measured by a time difference between a starting time at which the pattern generator outputs the test signal and an arrival time at which the test signal is fed back to the pattern generator.
摘要:
A wire order testing method for testing pin connection relationships between a memory device and an electronic device is provided. The method includes the steps of: testing the memory device with at least one test pattern to obtain at least one first data; predicting at least one second data that is to be obtained from the testing of the memory device with the test pattern according to the mapping relationships between the test pattern and the pins of the memory device; determining the pin connection relationships between the memory device and the electronic device according to the first data and second data.
摘要:
A method includes configuring an integrated circuit comprising one or more registers to provide a free running clock in the integrated circuit, simulating N clock cycles in the circuit to provide performance results for one or more registers in the circuit, wherein N is a selected number of staging levels, selecting one of the one or more registers, comparing the performance results for the selected register to performance results for each of the remaining registers to provide one or more equivalent delay candidate registers, and verifying each of the one or more equivalent delay candidate registers to provide one or more confirmed equivalent delay registers. A corresponding computer program product and computer system are also disclosed.
摘要:
A technique for determining performance characteristics of electronic devices and systems is disclosed. In one embodiment, the technique is realized by measuring a first response on a first transmission line from a single pulse transmitted on the first transmission line, and then measuring a second response on the first transmission line from a single pulse transmitted on at least one second transmission line, wherein the at least one second transmission line is substantially adjacent to the first transmission line. The worst case bit sequences for transmission on the first transmission line and the at least one second transmission line are then determined based upon the first response and the second response for determining performance characteristics associated with the first transmission line.
摘要:
An integrated circuit may include a reference voltage generating circuit for generating a reference voltage. The reference voltage generating circuit may include a digital operation circuit and a digital-to-analog converter. The digital operation circuit is configured to adjust a reference voltage to temperature code relationship using a coefficient that adjusts a relative relationship between the reference voltage and the temperature code, and separate code that adjusts an absolute relationship between the reference voltage and the temperature code, wherein the temperature code reflects a temperature at the integrated circuit. The digital-to-analog converter is configured to generate the reference voltage based on an output from the digital operation circuit
摘要:
A memory device includes a controller, a multiplexer, a deserializer, a data modifier, a memory cell array and an error detector. The controller is configured to generate signals in response to an address signal and a command signal. The multiplexer is configured to output a clock signal as internal data signals when the test mode signal is activated. The deserializer is configured to deserialize N bit values included in the internal data signals to generate deserialized signals. The data modifier is configured to invert the deserialized signals to generate bit line signals in response to an inversion control signal and the data modifying signals. The memory cell array is configured to store the bit line signals to memory cells corresponding to the address signal. The error detector is configured to determine if an error exists in signals read from the memory cells and to output an error detecting signal.
摘要:
An operation method of a memory device may include writing first data to a plurality of memory cells corresponding to a plurality of word lines, enabling a sense amplifier corresponding to the memory cells and setting second data in the sense amplifier, the second data having the opposite phase of the first data, and sequentially enabling the plurality of word lines for a predetermined time while enabling the sense amplifier.
摘要:
A method and an apparatus for testing a memory are provided, and the method is adapted for an electronic apparatus to test the memory. In the method, a left edge and a right edge of a first waveform of a clock signal for testing the memory are scanned to obtain a maximum width between two cross points of the left edge and the right edge. A central reference voltage of a data signal outputted by the memory is obtained, and a data width between two cross points of the central reference voltage and a left edge and a right edge of a second waveform of the data signal is obtained. Whether a difference between the data width and the maximum width is greater than a threshold is determined; if the difference is greater than the threshold, the memory is determined to be damaged.
摘要:
A method and an apparatus for testing a memory are provided, and the method is adapted for an electronic apparatus to test the memory. In the method, a left edge and a right edge of a first waveform of a clock signal for testing the memory are scanned to obtain a maximum width between two cross points of the left edge and the right edge. A central reference voltage of a data signal outputted by the memory is obtained, and a data width between two cross points of the central reference voltage and a left edge and a right edge of a second waveform of the data signal is obtained. Whether a difference between the data width and the maximum width is greater than a threshold is determined; if the difference is greater than the threshold, the memory is determined to be damaged.