MEMORY DEVICE AND METHOD OF OPERATION THEREOF
    8.
    发明申请
    MEMORY DEVICE AND METHOD OF OPERATION THEREOF 审中-公开
    存储器件及其操作方法

    公开(公告)号:US20170069358A1

    公开(公告)日:2017-03-09

    申请号:US15046090

    申请日:2016-02-17

    申请人: SK hynix Inc.

    IPC分类号: G11C7/06 G11C7/12

    摘要: An operation method of a memory device may include writing first data to a plurality of memory cells corresponding to a plurality of word lines, enabling a sense amplifier corresponding to the memory cells and setting second data in the sense amplifier, the second data having the opposite phase of the first data, and sequentially enabling the plurality of word lines for a predetermined time while enabling the sense amplifier.

    摘要翻译: 存储器件的操作方法可以包括将第一数据写入与多个字线相对应的多个存储器单元,使得能够读出对应于存储器单元的读出放大器并设置读出放大器中的第二数据,第二数据具有相反的 第一数据的相位,并且在启用读出放大器的同时,使多个字线顺序启用预定时间。

    Method and apparatus for testing memory utilizing a maximum width of a strobe signal and a data width of a data signal
    9.
    发明授权
    Method and apparatus for testing memory utilizing a maximum width of a strobe signal and a data width of a data signal 有权
    用于使用选通信号的最大宽度和数据信号的数据宽度来测试存储器的方法和装置

    公开(公告)号:US09036437B2

    公开(公告)日:2015-05-19

    申请号:US14150783

    申请日:2014-01-09

    发明人: Min-Hua Hsieh

    IPC分类号: G11C29/00 G11C29/04

    摘要: A method and an apparatus for testing a memory are provided, and the method is adapted for an electronic apparatus to test the memory. In the method, a left edge and a right edge of a first waveform of a clock signal for testing the memory are scanned to obtain a maximum width between two cross points of the left edge and the right edge. A central reference voltage of a data signal outputted by the memory is obtained, and a data width between two cross points of the central reference voltage and a left edge and a right edge of a second waveform of the data signal is obtained. Whether a difference between the data width and the maximum width is greater than a threshold is determined; if the difference is greater than the threshold, the memory is determined to be damaged.

    摘要翻译: 提供了一种用于测试存储器的方法和装置,并且该方法适用于电子设备来测试存储器。 在该方法中,扫描用于测试存储器的时钟信号的第一波形的左边缘和右边缘,以获得左边缘和右边缘的两个交叉点之间的最大宽度。 获得由存储器输出的数据信号的中心参考电压,并且获得中心参考电压的两个交叉点与数据信号的第二波形的左边缘和右边缘之间的数据宽度。 确定数据宽度和最大宽度之间的差异是否大于阈值? 如果差值大于阈值,则确定存储器被损坏。

    METHOD AND APPARATUS FOR TESTING MEMORY
    10.
    发明申请
    METHOD AND APPARATUS FOR TESTING MEMORY 有权
    测试记忆的方法和装置

    公开(公告)号:US20150092506A1

    公开(公告)日:2015-04-02

    申请号:US14150783

    申请日:2014-01-09

    发明人: Min-Hua Hsieh

    IPC分类号: G11C29/04

    摘要: A method and an apparatus for testing a memory are provided, and the method is adapted for an electronic apparatus to test the memory. In the method, a left edge and a right edge of a first waveform of a clock signal for testing the memory are scanned to obtain a maximum width between two cross points of the left edge and the right edge. A central reference voltage of a data signal outputted by the memory is obtained, and a data width between two cross points of the central reference voltage and a left edge and a right edge of a second waveform of the data signal is obtained. Whether a difference between the data width and the maximum width is greater than a threshold is determined; if the difference is greater than the threshold, the memory is determined to be damaged.

    摘要翻译: 提供了一种用于测试存储器的方法和装置,并且该方法适用于电子设备来测试存储器。 在该方法中,扫描用于测试存储器的时钟信号的第一波形的左边缘和右边缘,以获得左边缘和右边缘的两个交叉点之间的最大宽度。 获得由存储器输出的数据信号的中心参考电压,并且获得中心参考电压的两个交叉点与数据信号的第二波形的左边缘和右边缘之间的数据宽度。 确定数据宽度和最大宽度之间的差异是否大于阈值? 如果差值大于阈值,则确定存储器被损坏。