SEMICONDUCTOR MEMORY APPARATUS
    1.
    发明申请
    SEMICONDUCTOR MEMORY APPARATUS 有权
    半导体存储器

    公开(公告)号:US20150042388A1

    公开(公告)日:2015-02-12

    申请号:US14076545

    申请日:2013-11-11

    Applicant: SK hynix Inc.

    CPC classification number: H03K5/135

    Abstract: A semiconductor memory apparatus includes an enable signal generation unit configured to be inputted with a plurality of clocks which have different phases, and generate a plurality of enable signals; and a plurality of sampling units configured to output input data as sampling data in response to respective pairs of clocks of the plurality of clocks and respective ones of the plurality of enable signals.

    Abstract translation: 一种半导体存储装置,包括:使能信号生成部,被配置为输入具有不同相位的多个时钟,并生成多个使能信号; 以及多个采样单元,被配置为响应于所述多个时钟的相应时钟对和所述多个使能信号中的相应的时钟,输出输入数据作为采样数据。

    SEMICONDUCTOR DEVICE
    2.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号:US20160218713A1

    公开(公告)日:2016-07-28

    申请号:US14697916

    申请日:2015-04-28

    Applicant: SK hynix Inc.

    Abstract: A semiconductor device is disclosed, which relates to a technology for reducing current consumption of a semiconductor chip configured to operate a transmitter (Tx) at a high speed. The semiconductor device includes a data driving unit configured to output a pull-up drive signal and a pull-down drive signal by level-shifting an input signal according to a clock signal; and a data output unit configured to adjust slew rates of the pull-up drive signal and the pull-down drive signal according to a code signal, and output impedance-adjusted signals to an output terminal.

    Abstract translation: 公开了一种半导体器件,其涉及用于降低被配置为以高速操作发射器(Tx)的半导体芯片的电流消耗的技术。 半导体器件包括:数据驱动单元,被配置为通过根据时钟信号对输入信号进行电平移位来输出上拉驱动信号和下拉驱动信号; 以及数据输出单元,被配置为根据代码信号调整上拉驱动信号和下拉驱动信号的转换速率,并将阻抗调整信号输出到输出端子。

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