公开(公告)号：US20220197139A1

公开(公告)日：2022-06-23

申请号：US17527813

申请日：2021-11-16

Applicant: SK hynix Inc.

Inventor： Jae Hee SIM ,  Ji Eun KIM ,  Chung Hyeon BAN

IPC: G03F7/039 ,  G03F7/038 ,  G03F7/004

Abstract: A photoresist composition contains: a polymer comprising a first compound and a second compound; a photoacid generator; and a solvent. The first compound has a unit structure, which includes: hydrogen or an alkyl group; and at least one of hydrogen, a hydroxyl group, an alkyl group, an heteroalkyl group, a cycloalkyl group, an heterocycloalkyl group, an aryl group, and an heteroaryl group. The second compound has a unit structure, which includes at least one of hydrogen, a hydroxyl group, an alkyl group, an heteroalkyl group, a cycloalkyl group, an heterocycloalkyl group, an aryl group, and an heteroaryl group.