公开(公告)号：US20160336196A1

公开(公告)日：2016-11-17

申请号：US14927292

申请日：2015-10-29

Applicant: SK hynix Inc.

Inventor： Jae Hee SIM ,  Si Hyun KIM

IPC: H01L21/322 ,  B08B6/00

CPC classification number: B08B6/00 ,  H01L21/02057 ,  H01L21/0209 ,  H01L21/67028

Abstract: A wafer processing apparatus includes a particle charger for charging particles adsorbed onto a wafer with photoelectrons emitted from an emitter metal layer and a particle remover for applying an electric field to the wafer, which removes the charged particles from the wafer.

Abstract translation: 一种晶片处理装置，包括用于从发射极金属层发射的光电子吸收到晶片上的颗粒的粒子充电器，以及用于向晶片施加电场的颗粒去除器，其从晶片去除带电粒子。

公开(公告)号：US20170102619A1

公开(公告)日：2017-04-13

申请号：US15058816

申请日：2016-03-02

Applicant: SK hynix Inc.

Inventor： Sung Jae LEE ,  Keun Kyu KONG ,  Jae Hee SIM ,  Jeong Hoon AN ,  Yun Seop OH

IPC: G03F7/40 ,  H01L21/324 ,  G03F7/00 ,  H01L21/027 ,  G03F7/16 ,  G03F7/32

CPC classification number: G03F7/405 ,  G03F7/0035 ,  G03F7/0397 ,  G03F7/16 ,  G03F7/32 ,  G03F7/40 ,  H01L21/0273 ,  H01L21/0274 ,  H01L21/324

Abstract: Disclosed are a composition for coating a photoresist pattern and a method for forming a fine pattern using the same. The composition for coating a photoresist pattern includes a polymer compound containing a hydroxyl group and an ammonium base, and a solvent The method for forming a fine pattern includes coating the composition on a previously formed photoresist pattern to thereby effectively reduce the size of a photoresist contact hole or space, and can be used in all semiconductor processes in which a fine pattern is required to be formed.

公开(公告)号：US20210375632A1

公开(公告)日：2021-12-02

申请号：US17082535

申请日：2020-10-28

Applicant: SK hynix Inc.

Inventor： Ji Sok LEE ,  Sung Koo LEE ,  Jae Hee SIM

IPC: H01L21/3105 ,  H01L21/033

Abstract: A method for forming a planarization layer includes: providing a substrate including a trench; coating a pre-thinner over a surface of the trench; forming a gap-filling material in the trench; coating a post-thinner over the gap-filling material; and performing a spinning process to rotate the substrate.

公开(公告)号：US20220197139A1

公开(公告)日：2022-06-23

申请号：US17527813

申请日：2021-11-16

Applicant: SK hynix Inc.

Inventor： Jae Hee SIM ,  Ji Eun KIM ,  Chung Hyeon BAN

IPC: G03F7/039 ,  G03F7/038 ,  G03F7/004

Abstract: A photoresist composition contains: a polymer comprising a first compound and a second compound; a photoacid generator; and a solvent. The first compound has a unit structure, which includes: hydrogen or an alkyl group; and at least one of hydrogen, a hydroxyl group, an alkyl group, an heteroalkyl group, a cycloalkyl group, an heterocycloalkyl group, an aryl group, and an heteroaryl group. The second compound has a unit structure, which includes at least one of hydrogen, a hydroxyl group, an alkyl group, an heteroalkyl group, a cycloalkyl group, an heterocycloalkyl group, an aryl group, and an heteroaryl group.

公开(公告)号：US20220068655A1

公开(公告)日：2022-03-03

申请号：US17206528

申请日：2021-03-19

Applicant: SK hynix Inc.

Inventor： Jae Hee SIM

IPC: H01L21/3105 ,  H01L21/67

Abstract: An apparatus for planarizing a substrate may include a supporting plate, an injection mechanism and a controller. The supporting plate may be configured to receive the substrate including a coating layer formed on the substrate before a hardening process. The supporting plate may have at least one of a function for controlling a temperature of the substrate, a function for rotating the substrate and a function for vibrating the substrate. The injection mechanism may inject a gas having a set temperature and a set pressure to the coating layer of the substrate to horizontally planarize the coating layer. The controller may control a movement, a temperature and a pressure of the injection mechanism, and the temperature control, the rotation control and the vibration control of the supporting plate.

公开(公告)号：US20170207098A1

公开(公告)日：2017-07-20

申请号：US15138337

申请日：2016-04-26

Applicant: SK hynix Inc.

Inventor： Jae Hee SIM ,  Min Seok SON ,  Keun Kyu KONG ,  Jeong Hoon AN

IPC: H01L21/306 ,  H01L21/308 ,  H01L29/06 ,  H01L21/324

CPC classification number: H01L21/30604 ,  H01L21/02118 ,  H01L21/02282 ,  H01L21/0271 ,  H01L21/3085 ,  H01L21/32 ,  H01L21/324 ,  H01L29/0657

Abstract: A semiconductor integrated circuit device and a method of manufacturing the same are disclosed. A semiconductor wafer having a surface step is prepared. A first material layer is formed on an upper surface of the semiconductor wafer so that a protrusion is formed in a portion thereof corresponding to an edge region of the semiconductor wafer. A second material layer is formed on the first material layer.