利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

2 条记录 (耗时 0.012 秒)

    IMAGE SENSOR, SEMICONDUCTOR DEVICE AND IMAGE SENSOR SYSTEM
    1.
    发明申请
    IMAGE SENSOR, SEMICONDUCTOR DEVICE AND IMAGE SENSOR SYSTEM 审中-公开
    图像传感器，半导体器件和图像传感器系统

    公开(公告)号：US20140353469A1

    公开(公告)日：2014-12-04

    申请号：US14056617

    申请日：2013-10-17

    申请人： SK hynix Inc.

    发明人： Do-Hyung KIM ,  Jang-Won MOON ,  Youn-Sub LIM ,  Do-Hwan KIM

    IPC分类号： H01L27/146 ,  H04N5/378

    CPC分类号： H01L27/1463

    摘要： The present technology provides a semiconductor device that includes a substrate including an active region and an device isolation region, a plurality of micro insulation structures formed in the substrate of the device isolation region and spaced from each other, and an impurity region suitable for filling spaces between the micro insulation structures and for surrounding the micro insulation structures in the substrate of the device isolation region, and a method of fabricating the semiconductor device by improving a method of forming device isolation regions that insulate active regions. In particular, discontinuous micro insulation structures are suggested.

    摘要翻译： 本技术提供了一种半导体器件，其包括：衬底，其包括有源区和器件隔离区;多个微型绝缘结构，形成在器件隔离区的衬底中并彼此间隔开;以及杂质区，适于填充空间 在微型绝缘结构之间并且用于围绕器件隔离区域的衬底中的微绝缘结构，以及通过改进形成绝缘活性区域的器件隔离区域的方法来制造半导体器件的方法。 特别地，建议使用不连续的微型绝缘结构。

    ISOLATION STRUCTURE AND METHOD FOR FORMING THE SAME, AND IMAGE SENSOR INCLUDING THE ISOLATION STRUCTURE AND METHOD FOR FABRICATING THE IMAGE SENSOR
    2.
    发明申请
    ISOLATION STRUCTURE AND METHOD FOR FORMING THE SAME, AND IMAGE SENSOR INCLUDING THE ISOLATION STRUCTURE AND METHOD FOR FABRICATING THE IMAGE SENSOR 有权
    隔离结构及其形成方法，以及包括隔离结构的图像传感器和用于制作图像传感器的方法

    公开(公告)号：US20140353468A1

    公开(公告)日：2014-12-04

    申请号：US14010960

    申请日：2013-08-27

    申请人： SK hynix Inc.

    发明人： Chung-Seok CHOI ,  Jang-Won MOON ,  Jong-Chae KIM ,  Do-Hwan KIM ,  Kyoung-Oug RO

    IPC分类号： H01L27/146 ,  H01L29/06

    CPC分类号： H01L27/1463 ,  H01L27/1464 ,  H01L27/14643 ,  H01L29/0646 ,  H01L29/0649

    摘要： An isolation structure and method of forming the same. The isolation structure includes a first isolation structure having including an insulation layer formed in a trench in a substrate and a second isolation structure, formed on the first isolation structure. The second isolation structure includes a first impurity region formed in the substrate, the first impurity region having a first impurity doping concentration, and a second impurity region that is formed around the first impurity region, the second impurity region having a second impurity doping concentration that is greater than the first doping concentration.

    摘要翻译： 隔离结构及其形成方法。 隔离结构包括第一隔离结构，其包括形成在衬底中的沟槽中的绝缘层和形成在第一隔离结构上的第二隔离结构。 第二隔离结构包括在衬底中形成的第一杂质区，具有第一杂质掺杂浓度的第一杂质区和形成在第一杂质区周围的第二杂质区，第二杂质区具有第二杂质掺杂浓度， 大于第一掺杂浓度。